REVISION 1 05/01/15 13 LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS FANOUT BUFFER
83905-01 DATA SHEET
Overdriving the XTAL Interface
The XTAL_IN input can be overdriven by an LVCMOS driver or by one
side of a differential driver through an AC coupling capacitor. The
XTAL_OUT pin can be left floating. The amplitude of the input signal
should be between 500mV and 1.8V and the slew rate should not be
less than 0.2V/ns. For 3.3V LVCMOS inputs, the amplitude must be
reduced from full swing to at least half the swing in order to prevent
signal interference with the power rail and to reduce internal noise.
Figure 3A shows an example of the interface diagram for a high
speed 3.3V LVCMOS driver. This configuration requires that the sum
of the output impedance of the driver (Ro) and the series resistance
(Rs) equals the transmission line impedance. In addition, matched
termination at the crystal input will attenuate the signal in half. This
can be done in one of two ways. First, R1 and R2 in parallel should
equal the transmission line impedance. For most 50 applications,
R1 and R2 can be 100. This can also be accomplished by removing
R1 and changing R2 to 50. The values of the resistors can be
increased to reduce the loading for a slower and weaker LVCMOS
driver. Figure 3B shows an example of the interface diagram for an
LVPECL driver. This is a standard LVPECL termination with one side
of the driver feeding the XTAL_IN input. It is recommended that all
components in the schematics be placed in the layout. Though some
components might not be used, they can be utilized for debugging
purposes. The datasheet specifications are characterized and
guaranteed by using a quartz crystal as the input.
Figure 3A. General Diagram for LVCMOS Driver to XTAL Input Interface
Figure 3B. General Diagram for LVPECL Driver to XTAL Input Interface
VCC
XTAL_OUT
XTAL_IN
R1
100
R2
100
Zo = 50 ohmsRs
Ro
Zo = Ro + Rs
C1
.1uf
LVCMOS Driver
XTA L_O U T
XTA L_I N
Zo = 50 ohms
C2
.1uf
LVPECL Driver
Zo = 50 ohms
R1
50
R2
50
R3
50
83905-01 DATA SHEET
LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS FANOUT BUFFER 14 REVISION 1 05/01/15
Schematic Example
Figure 4 shows an example of the 83905-01 application schematic.
In this example, the device is operated at V
DD
= V
DDO
= 1.8V. The
decoupling capacitors should be located as close as possible to the
power pin. The input is driven by an 18pF load resonant quartz
crystal. The tuning capacitors C1 and C2 are fairly accurate, but
minor adjustments might be required. For the LVCMOS output
drivers, two termination examples are shown in this schematic. For
additional termination examples, see LVCMOS Termination
Application Note.
Figure 4. 83905-01 Schematic Layout
VDDO
EN ABLE 2 ENABLE 1
VDD VDDO
Zo = 50 Ohm
LVCMOS
C2
15pf
R3
10 0
U1
XTAL_OUT
1
EN ABLE 2
2
GND
3
BC LK0
4
VD DO
5
BC LK1
6
GND
7
BC LK2
8
VDD
9
BCLK3
10
GND
11
BCLK4
12
VD DO
13
BCLK5
14
EN ABLE 1
15
XTAL_IN
16
C3
10uF
CL = 18 pf
C4
.1uF
C5
.1uF
R4
10 0
C1
15pF
C6
.1uF
R2
31
LVCMOS
Zo = 50 Ohm
VDD
VDD = 1. 8V
VDDO = 1.8V
Unused outputs can be left floati ng. There shoul d be
no trace attached to unused outputs. Device
characterized and specifi cation limits set with all
outputs terminated.
Optional Termination
REVISION 1 05/01/15 15 LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS FANOUT BUFFER
83905-01 DATA SHEET
Power Considerations
This section provides information on power dissipation and junction temperature for the 83905-01.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 83905-01 is the sum of the core power plus the analog power plus the power dissipated due to the load. The
following is the power dissipation for V
DD
= 1.8V + 0.2V = 2.0V, which gives worst case results.
Power (core)
MAX
= V
DD_MAX
* I
DD
= 2V * 10mA = 20mW
Output Impedance R
OUT
Power Dissipation due to Loading 50 to V
DD
/2
Output Current I
OUT
= V
DD_MAX
/ [2 * (50 + R
OUT
)] = 2V / [2 * (50 + 17)] = 14.9mA
Power Dissipation on the R
OUT
per LVCMOS output
Power (R
OUT
) = R
OUT
* (I
OUT
)
2
= 17 * (14.9mA)
2
= 3.8mW per output
Total Power Dissipation on the R
OUT
Total Power (R
OUT
) = 3.8mW * 6 = 22.8mW
Dynamic Power Dissipation at 100MHz
Power (100MHz) = C
PD
* Frequency * (V
DD
)
2
= 12pF * 100MHz * (2V)
2
= 4.8mW per output
Total Power (100MHz) = 4.8mW * 6 = 28.8mW
Total Power Dissipation
Total Power
= Power (core)
MAX
+ Total Power (R
OUT
) + Total Power (100MHz)
= 20mW + 22.8mW + 28.8mW
= 71.6mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C.
The equation for Tj is as follows: Tj =
JA
* Pd_total + T
A
Tj = Junction Temperature
JA
= Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
JA
must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 100.3°C/W per Table 7 below.
Therefore, Tj for an ambient temperature of 70°C with all outputs switching is:
70°C + 0.072W *100.3°C/W = 77.2°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 7. Thermal Resistance
JA
for 16-Lead TSSOP, Forced Convection
JA
by Velocity
Meters per Second 012.5
Multi-Layer PCB, JEDEC Standard Test Boards 100.3°C/W 96.0°C/W 93.9°C/W

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