18TQ045STRL

Document Number: 93950 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jun-08 1
Schottky Rectifier, 18 A
18TQ...S
Vishay High Power Products
FEATURES
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term
reliability
Designed and qualified for Q101 level
DESCRIPTION
The 18TQ... Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
18 A
V
R
35 to 45 V
D
2
PAK
Anode
1
3
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 18 A
V
RRM
Range 35 to 45 V
I
FSM
t
p
= 5 µs sine 1800 A
V
F
18 Apk, T
J
= 125 °C 0.53 V
T
J
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 18TQ035S 18TQ040S 18TQ045S UNITS
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 149 °C, rectangular waveform 18 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1800
A
10 ms sine or 6 ms rect. pulse 390
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH 24 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3.6 A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93950
2 Revision: 25-Jun-08
18TQ...S
Vishay High Power Products
Schottky Rectifier, 18 A
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
18 A
T
J
= 25 °C
0.60
V
36 A 0.72
18 A
T
J
= 125 °C
0.53
36 A 0.67
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2.5
mA
T
J
= 125 °C 25
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK
18TQ035S
18TQ040S
18TQ045S
Document Number: 93950 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jun-08 3
18TQ...S
Schottky Rectifier, 18 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 0.8 1.2 1.4 1.6
1000
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.2 0.6 1.0
0.1
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
01015
20
45
0.01
0.1
1
10
100
35
0.001
25
1000
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
40
305
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 20304050
100
1000
10
T
J
= 25 °C
10 000
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

18TQ045STRL

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-18TQ045STRL-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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