TLP170D
2014-09-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
LED
Forward current I
F
50 mA
Forward current derating
(Ta ≥ 25°C)
ΔI
F
/°C −0.5 mA/°C
Pulse forward current
(100 μs pulse, 100 pps)
I
FP
1 A
Reverse voltage V
R
5 V
Junction temperature T
j
125 °C
Detector
Off-state output terminal voltage V
OFF
200 V
On-state current I
ON
200 mA
On-state RMS current derating
(Ta ≥ 25°C)
ΔI
ON
/°C −2.0 mA/°C
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Operating temperature range T
opr
−40 to 85 °C
Lead soldering temperature (10 s) T
sol
260 °C
Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note) BV
S
1500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage V
DD
⎯ ⎯ 160 V
Forward current I
F
⎯ 2 25 mA
ON-state current I
ON
⎯ ⎯ 160 mA
Operating temperature T
opr
−20 ⎯ 65 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse current I
R
V
R
= 5 V ⎯ ⎯ 10 μA
Capacitance C
T
V = 0, f = 1 MHz ⎯ 30 ⎯ pF
Detector
OFF-state current I
OFF
V
OFF
= 200 V ⎯ 1 1000 nA
Capacitance C
OFF
V = 0, f = 1 MHz ⎯ 90 ⎯ pF
