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NTJD4105CT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1 Publication Order Number:
NTJD4105C/D
NTJD4105C
Small Signal MOSFET
20 V / −8.0 V, Complementary,
+0.63 A / −0.775 A, SC−88
Features
• Complementary N and P Channel Device
• Leading −8.0 V Trench for Low R
DS(on)
Performance
• ESD Protected Gate − ESD Rating: Class 1
• SC−88 Package for Small Footprint (2 x 2 mm)
• Pb−Free Packages are Available
Applications
• DC−DC Conversion
• Load/Power Switching
• Single or Dual Cell Li−Ion Battery Supplied Devices
• Cell Phones, MP3s, Digital Cameras, PDAs
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage
N−Ch
V
DSS
20
V
P−Ch −8.0
Gate−to−Source Voltage
N−Ch
V
GS
±12
V
P−Ch ±8.0
Continuous Drain Current
− Steady State
(Based on R
q
JA
)
N−Ch
T
A
= 25°C
I
D
0.63
A
T
A
= 85°C 0.46
P−Ch
T
A
= 25°C −0.775
T
A
= 85°C −0.558
Continuous Drain Current
− Steady State
(Based on R
q
JL
)
N−Ch
T
A
= 25°C 0.91
T
A
= 85°C 0.65
P−Ch
T
A
= 25°C −1.1
T
A
= 85°C −0.8
Pulsed Drain Current
tp ≤ 10 ms
I
DM
±1.2 A
Power Dissipation − Steady State
(Based on R
q
JA
)
T
A
= 25°C
P
D
0.27
W
T
A
= 85°C 0.14
Power Dissipation − Steady State
(Based on R
q
JL
)
T
A
= 25°C 0.55
T
A
= 85°C 0.29
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode)
N−Ch
I
S
0.63
A
P−Ch −0.775
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Junction−to−Ambient
– Steady State
Typ
R
q
JA
400
°C/W
Max 460
Junction−to−Lead (Drain)
– Steady State
Typ
R
q
JL
194
Max 226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
MARKING DIAGRAM &
PIN ASSIGNMENT
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP I
D
Max
N−Ch 20 V
0.29 W @ 4.5 V
0.36 W @ 2.5 V
0.63 A
TC
M G
G
1
6
1
TC = Device Code
M = Date Code
G = Pb−Free Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
P−Ch −8.0 V
0.22 W @ −4.5 V
0.32 W @ −2.5 V
0.51 W @ −1.8 V
−0.775 A
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
Top View
SOT−363
SC−88 (6−LEADS)
D
1
G
2
S
2
S
1
G
1
D
2
6
5
4
1
2
3
SC−88/SOT−363
CASE 419B
STYLE 28
NTJD4105C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol N/P Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source
Breakdown Voltage
V
(BR)DSS
N
V
GS
= 0 V
I
D
= 250 mA
20 27 V
P
I
D
= −250 mA
−8.0 −10.5
Drain−to−Source Breakdown
Voltage Temperature Coeffi-
cient
V
(BR)DSS
/ T
J
N 22
mV/ °C
P −6.0
Zero Gate Voltage Drain Cur-
rent
I
DSS
N V
GS
= 0 V, V
DS
= 16 V
T
J
= 25 °C
1.0
mA
P V
GS
= 0 V, V
DS
= −6.4 V 1.0
Gate−to−Source
Leakage Current
I
GSS
N
V
DS
= 0 V
V
GS
= ±12 V 10
mA
P V
GS
= ±8.0 10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
N
V
GS
= V
DS
I
D
= 250 mA
0.6 0.92 1.5
V
P
I
D
= −250 mA
−0.45 −0.83 −1.0
Gate Threshold
Temperature Coefficient
V
GS(TH)
/
T
J
N −2.1
−mV/ °C
P 2.2
Drain−to−Source On Resist-
ance
R
DS(on)
N V
GS
= 4.5 V I
D
= 0.63 A 0.29 0.375
W
P V
GS
= −4.5 V, I
D
= −0.57 A 0.22 0.30
N V
GS
= 2.5 V, I
D
= 0.40 A 0.36 0.445
P V
GS
= −2.5 V, I
D
= −0.48 A 0.32 0.46
P V
GS
= −1.8 V, I
D
= −0.20 A 0.51 0.90
Forward Transconductance g
FS
N V
DS
= 4.0 V I
D
= 0.63 A 2.0
S
P V
DS
= −4.0 V, I
D
= −0.57 A 2.0
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
N
f = 1 MHz, V
GS
= 0 V
V
DS
= 20 V 33 46
pF
P V
DS
= −8.0V 160 225
Output Capacitance C
OSS
N V
DS
= 20 V 13 22
P V
DS
= −8.0 V 38 55
Reverse Transfer Capacitance C
RSS
N V
DS
= 20 V 2.8 5.0
P V
DS
= −8.0 V 28 40
Total Gate Charge Q
G(TOT)
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A 1.3 3.0
nC
P V
GS
= −4.5 V, V
DS
= −5.0 V, I
D
= −0.6 A 2.2 4.0
Threshold Gate Charge Q
G(TH)
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A 0.1
P V
GS
= −4.5 V, V
DS
= −5.0 V, I
D
= −0.6 A 0.1
Gate−to−Source Charge Q
GS
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A 0.2
P V
GS
= −4.5 V, V
DS
= −5.0 V, I
D
= −0.6 A 0.5
Gate−to−Drain Charge Q
GD
N V
GS
= 4.5 V, V
DS
= 10 V, I
D
= 0.7 A 0.4
P V
GS
= −4.5 V, V
DS
= −5.0 V, I
D
= −0.6 A 0.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
N
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 0.5 A, R
G
= 20 W
0.083
ms
Rise Time t
r
0.227
Turn−Off Delay Time t
d(OFF)
0.786
Fall Time t
f
0.506
Turn−On Delay Time t
d(ON)
P
V
GS
= −4.5 V, V
DD
= −4.0 V,
I
D
= −0.5 A, R
G
= 8.0 W
0.013
Rise Time t
r
0.023
Turn−Off Delay Time t
d(OFF)
0.050
Fall Time t
f
0.036
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
N
V
GS
= 0 V, T
J
= 25°C
I
S
= 0.23 A 0.76 1.1
V
P I
S
= −0.23 A 0.76 1.1
N
V
GS
= 0 V, T
J
= 125°C
I
S
= 0.23 A 0.63
P I
S
= −0.23 A 0.63
Reverse Recovery Time t
RR
N
V
GS
= 0 V,
d
IS
/d
t
= 90 A/ms
I
S
= 0.23 A 0.410
ms
P I
S
= −0.23 A 0.078
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTJD4105C
http://onsemi.com
3
TYPICAL N−CHANNEL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
1.4
1
62
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0.6
0.2
0
Figure 1. On−Region Characteristics
0.4
1.2
21.2 2.4
1
0.6
0.2
0.8
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
0.4 1
0.3
0.2
0
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.7
0.2 0.6
T
J
= −55°C
T
J
= 125°C
75 150
I
D
= 0.63 A
V
GS
= 4.5 V
and 2.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
2
1.2 V
0 1.4
Figure 6. Capacitance Variation
1.4 V
1.6 V
1.8 V
108
V
DS
≥ 10 V
0.4
V
GS
= 2 V
V
GS
= 4.5 V to 2.2 V
0.4
0.8
1.2
0.8
0.4
1.6
T
J
= 125°C
1.20.8
V
GS
= 4.5 V
T
J
= −55°C
T
J
= 25°C
0.1
0.4 1
0.3
0.2
0
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.7
0.2 0.6
T
J
= 125°C
0 1.4
0.4
1.20.8
V
GS
= 2.5 V
T
J
= −55°C
T
J
= 25°C
V
GS
= 0 V
100
80
60
40
20
0
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
T
J
= 25°C
C
oss
C
iss
C
rss
52015
0.6
0.5
0.5
0.6
1.8
1.6
P1-P3P4-P6P7-P8

NTJD4105CT4

Mfr. #:
Buy NTJD4105CT4
Manufacturer:
ON Semiconductor
Description:
MOSFET N/P-CH 20V/8V SOT-363
Lifecycle:
New from this manufacturer.
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