APTM120H140FT1G Datasheet APTM120H140FT1G | P1-P3

APTM120H140FT1G

APTM120H140FT1G – Rev 1 October, 2012

www.microsemi.com

1

–

7

79

1

4

NTC

11

810

12

3

6

Q1

Q2

5

Q4

Q3

2

Pins 3/4 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 1200 V

T

c

= 25°C 8

I

D

Continuous Drain Current

T

c

= 80°C 6

I

DM

Pulsed Drain current 50

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 1.68



P

D

Maximum Power Dissipation T

c

= 25°C 208 W

I

AR

Avalanche current (repetitive and non repetitive) 7 A

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Power MOS 8™ Fast FREDFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

 Very low stray inductance

- Symmetrical design

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

 RoHS Compliant

Full - Bridge

M

OSFET Power Module

V

DSS

= 1200V

R

DSon

= 1.4 typ @ Tj = 25°C

I

D

= 8A @ Tc = 25°C

APTM120H140FT1G

APTM120H140FT1G – Rev 1 October, 2012

www.microsemi.com

2

–

7

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 250

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 1200V

V

GS

= 0V

T

j

= 125°C 1000

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 7A

1.4 1.68



V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 1mA 3 4 5 V

I

GSS

Gate – Source Leakage Current V

GS

= ±30 V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 3812

C

oss

Output Capacitance 350

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

44

pF

Q

g

Total gate Charge 145

Q

gs

Gate – Source Charge 24

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 600V

I

D

= 7A

70

nC

T

d(on)

Turn-on Delay Time 26

T

r

Rise Time 15

T

d(off)

Turn-off Delay Time 85

T

f

Fall Time

Resistive switching @ 25°C

V

GS

= 15V

V

Bus

= 800V

I

D

= 7A

R

G

= 4.7

24

ns

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C

8

I

S

Continuous Source current

(Body diode)

Tc = 80°C

6

A

V

SD

Diode Forward Voltage V

GS

= 0V, I

S

= - 7A 1 V

dv/dt Peak Diode Recovery  25 V/ns

T

j

= 25°C 250

t

rr

Reverse Recovery Time

T

j

= 125°C 520

ns

T

j

= 25°C 1.12

Q

rr

Reverse Recovery Charge

I

S

= - 7A

V

R

= 100V

di

S

/dt = 100A/µs

T

j

= 125°C 3.03

µC

 dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I

S

 - 7A di/dt  1000A/µs V

DD

 800V T

j

 125°C

APTM120H140FT1G

APTM120H140FT1G – Rev 1 October, 2012

www.microsemi.com

3

–

7

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

thJC

Junction to Case Thermal Resistance

0.6 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

SP1 Package outline

(dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTM120H140FT1G

APTM120H140FT1G

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