APTGT50DH120TG Datasheet APTGT50DH120TG | P1-P3

APTGT50DH120TG

APTGT50DH120TG – Rev 2 October, 2012

www.microsemi.com

1-6

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C

75

I

C

Continuous Collector Current

T

C

= 80°C

50

I

CM

Pulsed Collector Current T

C

= 25°C 100

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

277 W

RBSOA Reverse Bias Safe Operating Area T

j

= 125°C 100A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note

APT0502 on www.microsemi.com

VBUS

Q4

OUT2OUT1

VBUS SENSE

CR3

0/VBU S

G4

E4

NT C2

Q1

CR2

0/VBUS SENSE

NTC1

G1

E1

V

CES

= 1200V

I

C

= 50A @ Tc = 80°C

Application

 Welding converters

 Switched Mode Power Supplies

 Switched Reluctance Motor Drives

Features

 Fast Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

- Symmetrical design

- Lead frames for power connections

 High level of integration

 Internal thermistor for temperature monitoring

Benefits

 Stable temperature behavior

 Very rugged

 Solderable terminals for easy PCB mounting

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Easy paralleling due to positive T

C

of V

CEsat

 Low profile

 RoHS Compliant

Asymmetrical - Bridge

Fast Trench + Field Stop IGBT3

P

ower Module

APTGT50DH120TG

APTGT50DH120TG – Rev 2 October, 2012

www.microsemi.com

2-6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 250 µA

T

j

= 25°C 1.7 2.1

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

= 15V

I

C

= 50A

T

j

= 125°C 2.0

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 2mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 3600

C

oes

Output Capacitance 190

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

160

pF

T

d(on)

Turn-on Delay Time 90

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 420

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= 15V

V

Bus

= 600V

I

C

= 50A

R

G

= 18 

70

ns

T

d(on)

Turn-on Delay Time 90

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 520

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= 15V

V

Bus

= 600V

I

C

= 50A

R

G

= 18 

90

ns

E

on

Turn-on Switching Energy T

j

= 125°C 5

E

off

Turn-off Switching Energy

V

GE

= 15V

V

Bus

= 600V

I

C

= 50A

R

G

= 18 

T

j

= 125°C 5.5

mJ

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 125°C 500

µA

I

F

DC Forward Current

Tc = 80°C 50 A

T

j

= 25°C 1.4 1.9

V

F

Diode Forward Voltage I

F

= 50A

T

j

= 125°C 1.3

V

T

j

= 25°C 150

t

rr

Reverse Recovery Time

T

j

= 125°C 250

ns

T

j

= 25°C 4.5

Q

rr

Reverse Recovery Charge

T

j

= 125°C 9

µC

T

j

= 25°C 2.1

E

r

Reverse Recovery Energy

I

F

= 50A

V

R

= 600V

di/dt =2000A/µs

T

j

= 125°C 4.2

mJ

APTGT50DH120TG

APTGT50DH120TG – Rev 2 October, 2012

www.microsemi.com

3-6

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

B

25/85

T

25

= 298.15 K 3952

K





























TT

B

R

T

11

exp

25

85/25

25

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.45

R

thJC

Junction to Case Thermal Resistance

Diode 0.58

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2.5 4.7 N.m

Wt Package Weight 160

g

SP4 Package outline

(dimensions in mm)

ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGT50DH120TG

APTGT50DH120TG

Products related to this Datasheet