SiHG32N50D
www.vishay.com
Vishay Siliconix
S12-1458-Rev. A, 18-Jun-12
1
Document Number: 91515
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D Series Power MOSFET
FEATURES
•Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (C
iss
)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (U
IS
)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-Of-Merit (FOM): R
on
x Q
g
- Fast Switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding, Induction Heating, Motor Drives
• Battery Chargers
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.3 mH, R
g
= 25 , I
AS
= 14 A.
c. 1.6 mm from case.
d. I
SD
I
D
, starting T
J
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 550
R
DS(on)
max. at 25 °C ()V
GS
= 10 V 0.150
Q
g
max. (nC) 96
Q
gs
(nC) 18
Q
gd
(nC) 29
Configuration Single
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SiHG32N50D-E3
Lead (Pb)-free and Halogen-free
SiHG32N50D-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
500
V
Gate-Source Voltage
V
GS
± 30
Gate-Source Voltage AC (f > 1 Hz) 30
Continuous Drain Current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
30
AT
C
= 100 °C 19
Pulsed Drain Current
a
I
DM
89
Linear Derating Factor 3.1 W/°C
Single Pulse Avalanche Energy
b
E
AS
225 mJ
Maximum Power Dissipation P
D
390 W
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150 °C
Drain-Source Voltage Slope T
J
= 125 °C
dV/dt
24
V/ns
Reverse Diode dV/dt
d
0.37
Soldering Recommendations (Peak Temperature) for 10 s 300
c
°C