ZXMN2B01F
Issue 2 - March 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V
(BR)DSS
20 V I
D
= 250A, V
GS
=0V
Zero gate voltage drain current I
DSS
1 AV
DS
= 20V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±8V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
0.4 1.0 V I
D
= 250A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
R
DS(on)
0.100 ⍀ V
GS
= 4.5V, I
D
= 2.4A
0.150 ⍀ V
GS
= 2.5V, I
D
= 2.0A
0.200 ⍀ V
GS
= 1.8V, I
D
= 1.7A
Forward transconductance
(*)(‡)
g
fs
6.1 S V
DS
= 10V, I
D
= 2.4A
Dynamic
(‡)
Input capacitance C
iss
370 pF V
DS
= 10V, V
GS
=0V
f=1MHz
Output capacitance C
oss
81 pF
Reverse transfer capacitance C
rss
46 pF
Switching
(†)
(‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
2.2 ns V
DD
= 10V, V
GS
= 4.5V
I
D
= 1A
R
G
≈
6.0⍀
Rise time t
r
3.6 ns
Turn-off delay time t
d(off)
17.8 ns
Fall time t
f
10.5 ns
Total gate charge Q
g
4.8 nC V
DS
= 10V, V
GS
= 4.5V
I
D
= 2.4A
Gate-source charge Q
gs
0.6 nC
Gate drain charge Q
gd
1.0 nC
Source-drain diode
Diode forward voltage
(*)
V
SD
0.73 0.95 V T
j
=25°C, I
S
= 1.2A,
V
GS
=0V
Reverse recovery time
(‡)
t
rr
6.7 ns T
j
=25°C, I
F
= 1.1A,
di/dt=100A/ms
Reverse recovery charge
(‡)
Q
rr
1.3 nC
