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MC74HC1G04DTT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 10
1 Publication Order Number:
MC74HC1G04/D
MC74HC1G04
Single Inverter
The MC74HC1G04 is a high speed CMOS inverter fabricated with
silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including
a buffer output which provides high noise immunity and stable output.
The MC74HC1G04 output drive current is 1/2 compared to
MC74HC series.
• High Speed: t
PD
= 7 ns (Typ) at V
CC
= 5 V
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25_C
• High Noise Immunity
• Balanced Propagation Delays (t
pLH
= t
pHL
)
• Symmetrical Output Impedance (I
OH
= I
OL
= 2 mA)
• Chip Complexity: FET = 105
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Figure 1. Pinout (Top View)
V
CC
NC
IN A
OUT Y
GND
Figure 2. Logic Symbol
IN A
OUT Y
1
1
2
3
4
5
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
L
H
FUNCTION TABLE
Input A Output Y
H
L
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5V
CC
OUT Y
SC−88A
(SC70−5/SOT−353)
DF SUFFIX
CASE 419A
TSOP−5
DT SUFFIX
CASE 483
1
5
http://onsemi.com
H5 MG
G
H5 MG
G
H5 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
1
5
SC−88A TSOP−5
MC74HC1G04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to V
CC
+ 0.5 V
V
OUT
DC Output Voltage −0.5 to V
CC
+ 0.5 V
I
IK
DC Input Diode Current ±20 mA
I
OK
DC Output Diode Current ±20 mA
I
OUT
DC Output Sink Current ±12.5 mA
I
CC
DC Supply Current per Supply Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260
_C
T
J
Junction Temperature Under Bias +150
_C
q
JA
Thermal Resistance SC70−5/SC−88A (Note 1)
TSOP−5
350
230
_C/W
P
D
Power Dissipation in Still Air at 85_C SC70−5/SC−88A
TSOP−5
150
200
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125_C (Note 5)
±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 6.0 V
V
IN
DC Input Voltage 0.0 V
CC
V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range −55 +125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
0
1000
600
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130_C
T
J
= 120_C
T
J
= 110_C
T
J
= 100_C
T
J
= 90_C
T
J
= 80_C
MC74HC1G04
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25_C T
A
v 85_C *55_C v T
A
v 125_C
Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= −20 mA
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
1.9
2.9
4.4
5.9
V
V
IN
= V
IH
or V
IL
I
OH
= −2 mA
I
OH
= −2.6 mA
4.5
6.0
4.18
5.68
4.31
5.80
4.13
5.63
4.08
5.58
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 20 mA
2.0
3.0
4.5
6.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 2 mA
I
OL
= 2.6 mA
4.5
6.0
0.17
0.18
0.26
0.26
0.33
0.33
0.40
0.40
I
IN
Maximum Input
Leakage Current
V
IN
= 6.0 V or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 6.0 1.0 10 40
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 6.0 ns)
T
A
= 25_C T
A
v 85_C *55_C v T
A
v 125_C
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit
t
PLH
,
t
PHL
Maximum
Propagation Delay,
Input A or B to Y
V
CC
= 5.0 V C
L
= 15 pF 3.5 15 20 25 ns
V
CC
= 2.0 V C
L
= 50 pF
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
18
10
7
6
100
27
20
17
125
35
25
21
155
90
35
26
t
TLH
,
t
THL
Output Transition
Time
V
CC
= 5.0 V C
L
= 15 pF 3 10 15 20 ns
V
CC
= 2.0 V C
L
= 50 pF
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
25
16
11
9
125
35
25
21
155
45
31
26
200
60
38
32
C
IN
Maximum Input
Capacitance
5 10 10 10 pF
Typical @ 25_C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6) 10 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

MC74HC1G04DTT1G

Mfr. #:
Buy MC74HC1G04DTT1G
Manufacturer:
ON Semiconductor
Description:
Inverters 2-6V Single CMOS
Lifecycle:
New from this manufacturer.
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