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PBHV9050Z/ZLX

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
AEC-Q101 qualified
Medium power SMD plastic package
1.3 Applications
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
Rev. 1 — 19 August 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CESM
collector-emitter peak
voltage
V
BE
=0 - - −500 V
V
CEO
collector-emitter voltage open base - - −500 V
I
C
collector current - - −0.25 A
h
FE
DC current gain V
CE
= −10 V;
I
C
= −50 mA
[1]
80 160 300
PBHV9050Z All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 19 August 2010 2 of 13
NXP Semiconductors
PBHV9050Z
500 V, 250 mA PNP high-voltage low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2 collector
3emitter
4 collector
132
4
sym028
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBHV9050Z SC-73 plastic surface-mounted package with increased
heat sink; 4 leads
SOT223
Table 4. Marking codes
Type number Marking code
PBHV9050Z V9050Z
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −500 V
V
CEO
collector-emitter voltage open base - −500 V
V
CESM
collector-emitter peak
voltage
V
BE
=0 - −500 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current - −0.25 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −0.5 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −200 mA
P1-P3P4-P6P7-P9P10-P12P13-P14

PBHV9050Z/ZLX

Mfr. #:
Buy PBHV9050Z/ZLX
Manufacturer:
Nexperia
Description:
TRANSISTOR PNP SOT-223
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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