IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
T
; V
CE
= 10 V, 9 17 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
1500 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 120 pF
C
res
40 pF
Q
g
55 nC
Q
ge
I
C
= I
T
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13 nC
Q
gc
17 nC
t
d(on)
15 ns
t
ri
25 ns
t
d(off)
75 140 ns
t
fi
60 110 ns
E
off
0.24 0.36 mJ
t
d(on)
15 ns
t
ri
12 ns
E
on
0.15 mJ
t
d(off)
130 ns
t
fi
110 ns
E
off
0.6 mJ
R
thJC
1.57 K/W
R
thCK
0.15 K/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
T
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18 Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
T
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 18 Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Note: 1. I
T
= 24A
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXGR 24N60C
