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MT18VDDT12872AY-40BJ1

P1-P3P4-P6P7-P9P10-P12P13-P13
Products and specifications discussed herein are subject to change by Micron without notice.
Draft 9/ 9/ 2008
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
Features
PDF: 09005aef80814e61/Source: 09005aef807f8acb Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD18C64_128x72A.fm - Rev. D 9/08 EN
1 ©2004 Micron Technology, Inc. All rights reserved.
DDR SDRAM UDIMM
MT18VDDT6472A – 512MB
1
MT18VDDT12872A – 1GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 184-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• Vdd = VddQ = +2.5V
(-40B: Vdd = VddQ = +2.6V)
• Vddspd = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
2n-prefetch architecture
• Bidirectional data strobe (DQS) transmitted/
received with data—that is, source-synchronous
data capture
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
operation
•Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
compatibility
• Gold edge contacts
Figure 1: 184-Pin UDIMM (MO-206 R/C B)
1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
Options Marking
• Operating temperature
2
– Commercial (0°C ≤ T
A
≤ +70°C) None
– Industrial (–40°C ≤ T
A
≤ +85°C) I
•Package
– 184-pin DIMM (standard) G
– 184-pin DIMM (Pb-free) Y
• Memory clock, speed, CAS latency
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0 -40B
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
1
-262
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
1
-26A
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
1
-265
PCB height: 31.75mm (1.25in)
Notes: 1. The values of
t
RCD and
t
RP for -335 modules show 18ns to align with industry specifications;
actual DDR SDRAM device specifications are 15ns.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns) NotesCL = 3 CL = 2.5 CL = 2
-40B PC3200 400 333 266 15 15 55
-335 PC2700 – 333 266 18 18 60 1
-262 PC2100 – 266 266 15 15 60
-26A PC2100 – 266 266 20 20 65
-265 PC2100 – 266 200 20 20 65
Draft 9/ 9/ 2008
PDF: 09005aef80814e61/Source: 09005aef807f8acb Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD18C64_128x72A.fm - Rev. D 9/08 EN
2 ©2004 Micron Technology, Inc. All rights reserved
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
Features
Notes: 1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDT12872AY-335F1
.
Table 2: Addressing
Parameter 512MB 1GB
Refresh count 8K 8K
Row address 8K (A0–A12) 8K (A0–A12)
Device bank address 4 (BA0, BA1) 4 (BA0, BA1)
Device configuration 256Mb (32 Meg x 8) 512Mb (64 Meg x 8)
Column address 1K (A0–A9) 2K (A0–A9, A11)
Module rank address 2 (S0#, S1#) 2 (S0#, S1#)
Table 3: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V32M8,
1
256Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18VDDT6472AG-40B__ 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT18VDDT6472AY-40B__ 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT18VDDT6472AG-335__ 512MB 64 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT18VDDT6472AY-335__ 512MB 64 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT18VDDT6472AG-262__ 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-2-2
MT18VDDT6472AG-26A__ 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3
MT18VDDT6472AY-26A__ 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-3-3
MT18VDDT6472AG-265__ 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
MT18VDDT6472AY-265__ 512MB 64 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
Table 4: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT46V64M8,
1
512Mb DDR SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT18VDDT12872AG-40B__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT18VDDT12872AY-40B__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT18VDDT12872AG-335__ 1GB 128 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT18VDDT12872AY-335__ 1GB 128 Meg x 72 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3
MT18VDDT12872AG-262__ 1GB 128 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2-2-2
MT18VDDT12872AG-265__ 1GB 128 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
MT18VDDT12872AY-265__ 1GB 128 Meg x 72 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3
Draft 9/ 9/ 2008
PDF: 09005aef80814e61/Source: 09005aef807f8acb Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD18C64_128x72A.fm - Rev. D 9/08 EN
3 ©2004 Micron Technology, Inc. All rights reserved
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Table 5: Pin Assignments
184-Pin DDR UDIMM Front 184-Pin DDR UDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 Vref 24 DQ17 47 DQS8 70 Vdd 93 Vss 116 Vss 139 Vss 162 DQ47
2 DQ0 25 DQS2 48 A0 71 NC 94 DQ4 117 DQ21 140 DM8 163 NC
3 Vss 26 Vss 49 CB2 72 DQ48 95 DQ5 118 A11 141 A10 164 VddQ
4 DQ1 27 A9 50 Vss 73 DQ49 96 VddQ 119 DM2 142 CB6 165 DQ52
5 DQS0 28 DQ18 51 CB3 74 Vss 97 DM0 120 Vdd 143 VddQ 166 DQ53
6 DQ2 29 A7 52 BA1 75 CK2# 98 DQ6 121 DQ22 144 CB7 167 NC
7 Vdd 30 VddQ 53 DQ32 76 CK2 99 DQ7 122 A8 145 Vss 168 Vdd
8 DQ3 31 DQ19 54 VddQ 77 VddQ 100 V
SS 123 DQ23 146 DQ36 169 DM6
9 NC 32 A5 55 DQ33 78 DQS6 101 NC 124 Vss 147 DQ37 170 DQ54
10 NC 33 DQ24 56 DQS4 79 DQ50 102 NC 125 A6 148 Vdd 171 DQ55
11 Vss 34 Vss 57 DQ34 80 DQ51 103 NC 126 DQ28 149 DM4 172 VddQ
12 DQ8 35 DQ25 58 Vss 81 Vss 104 VddQ 127 DQ29 150 DQ38 173 NC
13 DQ9 36 DQS3 59 BA0 82 NC 105 DQ12 128 VddQ 151 DQ39 174 DQ60
14 DQS1 37 A4 60 DQ35 83 DQ56 106 DQ13 129 DM3 152 Vss 175 DQ61
15 VddQ 38 Vdd 61 DQ40 84 DQ57 107 DM1 130 A3 153 DQ44 176 Vss
16 CK1 39 DQ26 62 VddQ 85 Vdd 108 Vdd 131 DQ30 154 RAS# 177 DM7
17 CK1# 40 DQ27 63 WE# 86 DQS7 109 DQ14 132 Vss 155 DQ45 178 DQ62
18 Vss 41 A2 64 DQ41 87 DQ58 110 DQ15 133 DQ31 156 VddQ 179 DQ63
19 DQ10 42 Vss 65 CAS# 88 DQ59 111 CKE1 134 CB4 157 S0# 180 VddQ
20 DQ11 43 A1 66 Vss 89 Vss 112 VddQ 135 CB5 158 S1# 181 SA0
21 CKE0 44 CB0 67 DQS5 90 NC 113 NC 136 VddQ 159 DM5 182 SA1
22 VddQ 45 CB1 68 DQ42 91 SDA 114 DQ20 137 CK0 160 Vss 183 SA2
23 DQ16 46 Vdd 69 DQ43 92 SCL 115 A12 138 CK0# 161 DQ46 184 Vddspd
P1-P3P4-P6P7-P9P10-P12P13-P13

MT18VDDT12872AY-40BJ1

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Manufacturer:
Micron
Description:
MODULE DDR SDRAM 1GB 184UDIMM
Lifecycle:
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