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SI5480DU-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
Vishay Siliconix
Si5480DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
)A(tnerruCecruoS-I
S
T
J
= 25 °C
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
)
ht
(SG
)
V(
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
0.02
0.03
0.04
0.05
02468 10
I
D
= 7.2 A
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
mΩ)(ecnatsiseR-nOecruoS-ot-niarD-
T
A
= 25 °C
T
A
= 125 °C
0
30
40
10
20
)W(re
woP
Time (s)
000110.10.01 00101100.0
50
Safe Operating Area, Junction-to-Ambient
100
1
00111.0
0.01
10
)
A(t
n
e
r
ru
Cn
iar
D-I
D
0.1
100 µs
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)
*
10
1 ms
BVDSS Limited
>
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
Vishay Siliconix
Si5480DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
8
16
24
32
40
0 255075100125150
Package Limited
I
D
)A(tnerruCniarD-
T
C
- Case Temperature (°C)
Power Derating
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
C
- Case Temperature (°C)
)W(noitapissiDrewoP
www.vishay.com
6
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
Vishay Siliconix
Si5480DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73585.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarTevitceffEdezilamroN
ecnadepmIlamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
110
-1
10
-4
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarTevitce
ffEde
z
ilam
ro
N
ecnadepmIlamreh
T
Single Pulse
1
0.1
P1-P3P4-P6P7-P7

SI5480DU-T1-E3

Mfr. #:
Buy SI5480DU-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3
Lifecycle:
New from this manufacturer.
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