MGA-665P8-TR2 Datasheet MGA-665P8-TR1, MGA-665P8-BLK, MGA-665P8-TR2 | P1-P3

Features

• Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC

• Active-low power-down function

• Single +3 V supply operation

• Low noise and high gain MMIC

• Output 50 Ω match

• Excellent isolation

• Minimal match and external biasing components

• Housed in miniature 2 x 2 x 0.75 mm LPCC package

• Pb-free & MSL-1 package

Specications

• 0.5 to 6 GHz operation

• At 3 V, 20.5 mA, 2.4 GHz:

NF = 1.2 dB

Gain = 18.4 dB

OIP3 = 19 dBm

• At 3 V, 20.5 mA, 5.25 GHz:

NF = 1.45 dB

Gain = 16 dB

OIP3 = 18.1 dBm

Description

Avago’s MGA-665P8 is an economical, easy-to-use

GaAs MMIC Low Noise Amplier (LNA) with a unique

active-low power-down function. The LNA has low

noise gure and high gain achieved through the use of

Avago Technologies’ proprietary GaAs Enhancement-

mode PHEMT process. It is housed in a miniature 2.0 x

2.0 x 0.75 mm 8-pin Leadless-Plastic-Chip-Carrier (LPCC)

package. The compact footprint and low prole coupled

with low noise, high gain and high linearity makes the

MGA-665P8 an ideal choice as an LNA for broadband

general-purpose applications. Its excellent broadband

isolation also makes it a good buer amplier.

The output of the MGA-665P8 provides a very good

broadband match to 50 Ω. Its input requires a simple

external LC network to provide a low noise gure and

good input return loss. Power supply voltage is applied

to both the output terminal and a separate V

terminal.

A simple external bias insertion circuit consisting of a

shunt inductor and a series dc block capacitor is suf-

cient to apply power supply voltage to the output of

the MGA-665P8. The MGA-665P8 provides typical device

performance of 1.45 dB noise gure, 16 dB gain and an

OIP3 of +18.1 dBm at 5.25 GHz, at a bias point of 3 V and

20.5 mA.

Pin Conguration, Top View

Attention: Observe precautions for handling electrostatic sensitive devices.

ESD Machine Model = 40 V

ESD Human Body Model = 150 V

Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.

8: UNUSED

7: RF

OUT

& V

6: V

5: POWERDOWN

POWER DOWN FUNCITON:

LOGIC LOW (0-1 V): POWER ON

LOGIC HIGH (2-3 V): POWER OFF

NOTES:

1. PINS 1, 3, AND PADDLE NEED TO BE

PROPERLY GROUNDED TO OBTAIN

SPECIFIED PERFORMANCE.

2. SUPPLY VOLTAGE, V

, NEEDS TO BE

APPLIED AT PINS 6 & 7. SUPPLY AT

PIN 7 TO BE APPLIED USING A BIAS

TEE OR EQUIVALENT.

GND PADDLE

1: GND

2: RF

3: GND

4: UNUSED

MGA-665P8

GaAs Enhancement-Mode PHEMT

0.5 – 6 GHz Low Noise Amplier

Data Sheet

Table 1. Absolute Maximum Ratings

[1]

Symbol Parameter Units Absolute Maximum

Supply Voltage

[2]

V 6

Control Voltage

[2]

V 6

Drain Current

[2]

mA 45.6

Pdiss Total Power Dissipation

[3]

W 0.27

Pin max. RF Input Power dBm 13

Channel Temperature °C 150

STG

Storage Temperature °C -65 to 150

ch_b

Thermal Resistance

[4]

°C/W 44.76

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. DC quiescent conditions.

3. Board (package belly) temperature T

is 25°C. Derate 29 mW/°C for T

> 133°C.

4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement

method.

Product Consistency Distribution Charts at 5.25 GHz, 3.0 V, Id = 20.5 mA

[5,6]

Figure 1. NF; nominal = 1.45.

Notes:

5. Distribution data sample size is 500 samples taken from 3 dierent wafers lots. Future wafers allocated to this product may have nominal val-

ues anywhere between the upper and lower limits.

6. Measurements are made on production test board described in Figure 5, which represents a trade-o between optimal OIP3, P1dB, Gain and

NF. Circuit losses have been de-embedded from actual measurements

Figure 4. P1dB; LSL = 11, nominal = 11.4.Figure 3. Gain (dB); nominal = 16 dB.

Figure 2. OIP3; LSL = 17.8, nominal = 18.2.

160

120

1.2 1.3 1.7

NF (dB)

FREQUENCY

1.4 1.5

+3 Std

1.6

Stdev = 0.067

180

17 17.5 19

OIP3 (dBm)

FREQUENCY

120

150

18.5

Stdev = 0.23

–3 Std

180

15 17

GAIN (dB)

FREQUENCY

120

150

Stdev = 0.20

–3 Std +3 Std

400

300

100

11 12

P1dB (dBm)

FREQUENCY

11.5

+3 Std

200

–3 Std

Stdev = 0.11

Table 2. MGA-665P8 Electrical Specications

= 25°C, DC Bias for RF Parameter is V

= 3.0 V (unless otherwise specied)

Symbol Parameter and Test Condition Units Min. Typ. Max.

Control Voltage V - ON: 0–1 V -

O: 2–3 V

Device Current mA 18.2 20.5 23.8

(O) O current V

= 3 V µA - 180 220

test

[7]

Gain Freq = 5.25 GHz dB 14.5 16 17.5

test

[7]

Noise Figure Freq = 5.25 GHz dB - 1.45 1.9

OIP3

test

[7,8]

Output Third Order Intercept Point Freq = 5.25 GHz dBm 16.5 18.2 -

P1dB

test

[7]

Output Power at 1dB Gain Compression Freq = 5.25 GHz dBm - 11.4 -

Psat

test

[7]

Output Power at Saturation Freq = 5.25 GHz dBm - 15 -

IRL

test

[7]

Input return Loss Freq = 5.25 GHz dB - 18 -

ORL

test

[7]

Output Return Loss Freq = 5.25 GHz dB - 20 -

[8]

Associated Gain at NF

Freq = 0.9 GHz dB - 22.58 -

Freq = 2.4 GHz 18.42

Freq = 3.5 GHz 16.99

Freq = 5.25 GHz 16.00

Freq = 5.8 GHz 17.16

[8]

Optimum Noise Figure Freq = 0.9 GHz dB - 1.30 -

(Tuned for Lowest Noise Figure) Freq = 2.4 GHz 1.18

Freq = 3.5 GHz 1.36

Freq = 5.25 GHz 1.45

Freq = 5.8 GHz 1.44

OIP3

[8,9]

Output Third Order Intercept Point at NFo Freq = 0.9 GHz dBm - 21.26 -

Freq = 2.4 GHz 19.02

Freq = 3.5 GHz 17.30

Freq = 5.25 GHz 18.10

Freq = 5.8 GHz 17.89

1dB

[8]

Output Power at 1 dB Gain Compression Freq = 0.9 GHz dBm - 8.62 -

Point at NF

Freq = 2.4 GHz 7.41

Freq = 3.5 GHz 6.89

Freq = 5.25 GHz 7.80

Freq = 5.8 GHz 8.32

Notes:

7. Measurements obtained using production test board described in Figure 5, which represents a trade-o between optimal OIP3, P1dB, Gain

and NF. Circuit losses have been de-embedded from actual measurements.

8. Measurements obtained using test xture with input tuned for low noise gure. Gain, OIP3 and P1dB were measured at this tuned condition.

Tuner and xture losses have been de-embedded from actual measurements. The supply is connected to ground via a bypass capacitor. The

OIP3 is approximately 3 dB lower without this bypass capacitor.

9. OIP3 test condition: Pin = -20 dBm, Df = f

– f

= 10 MHz.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

MGA-665P8-TR2

Mfr. #:

Buy MGA-665P8-TR2

Manufacturer:

Broadcom / Avago

Description:

RF Amplifier 3 SV 16 dB

Lifecycle:

New from this manufacturer.

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MGA-665P8-TR2

MGA-665P8-TR2

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