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2N5192G

P1-P3P4-P6
2N5190G, 2N5191G, 2N5192G
http://onsemi.com
4
R
BE
, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
10
3
-0.4
Figure 5. Collector Cut−Off Region
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
10
2
10
1
10
0
10
-1
10
-2
10
-3
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
V
CE
= 30 V
T
J
= 150°C
100°C
25°C
REVERSE
FORWARD
I
CES
10
7
20
Figure 6. Effects of Base−Emitter Resistance
T
J
, JUNCTION TEMPERATURE (°C)
40 60 80 100 120 140 16
0
10
6
10
5
10
4
10
3
10
2
V
CE
= 30 V
I
C
= 10 x I
CES
I
C
= 2 x I
CES
I
C
≈ I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 5)
Figure 7. Switching Time Equivalent Test Circuit
APPROX
+11 V
TURN-ON PULSE
V
in
t
1
V
EB(off)
TURN-OFF PULSE
V
in
t
3
t
2
APPROX
+11 V
V
CC
SCOPE
R
B
C
jd
<<C
eb
-4.0 V
t
1
≤ 7.0 ns
100 < t
2
< 500 ms
t
3
< 15 ns
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
V
in
R
C
0
R
B
and R
C
varied
to obtain desired
current levels
300
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
0.2 0.3 0.5 1.0 3.0 5.0 20
40
200
100
70
50
30
T
J
= +25°C
CAPACITANCE (pF)
Figure 8. Capacitance
2.0 10 30
C
eb
C
cb
2.0
0.05
Figure 9. Turn−On Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.07 0.1 0.2 0.3 1.0 2.0 4.0
t
r
@ V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
0.03
0.5
0.05
0.07
0.7 3.0
t
r
@ V
CC
= 10 V
t
d
@ V
EB(off)
= 2.0 V
2.0
0.05
Figure 10. Turn−Off Time
I
C
, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.07 0.1 0.2 0.3 1.0 2.0 4.0
t
f
@ V
CC
= 30 V
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′ = t
s
- 1/8 t
f
T
J
= 25°C
0.03
t, TIME (s)μ
0.5
0.05
0.07
0.7 3.0
t
f
@ V
CC
= 10 V
t
s
′
2N5190G, 2N5191G, 2N5192G
http://onsemi.com
5
10
1.0
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0 5.0 10 20 50 10
0
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT AT T
C
= 25°C
BONDING WIRE LIMIT
0.2
I
C
, COLLECTOR CURRENT (AMP)
CURVES APPLY BELOW RATED V
CEO
T
J
= 150°C
dc
1.0ms
100ms
2N5191
2N5192
5.0ms
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 1000500
q
JC(max)
= 3.12°C/W — 2N5190-92
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE, D = t
1
f -
t
1
t
P
PEAK PULSE POWER = P
P
Figure A
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find q
JC
(t), multiply the value obtained from Figure 12
by the steady state value q
JC
.
Example:
The 2N5190 is dissipating 50 watts under the following
conditions: t
1
= 0.1 ms, t
p
= 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t
1
, D) is 0.27.
The peak rise in function temperature is therefore:
DT = r(t) × P
P
× q
JC
= 0.27 × 50 × 3.12 = 42.2_C
2N5190G, 2N5191G, 2N5192G
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
DIM MIN MAX
MILLIMETERS
D 10.60 11.10
E 7.40 7.80
A 2.40 3.00
b 0.60 0.90
P 2.90 3.30
L1 1.27 2.54
c 0.39 0.63
L 14.50 16.63
b2 0.51 0.88
Q 3.80 4.20
A1 1.00 1.50
e 2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
e
c
L
A1
A
FRONT VIEW BACK VIEW
FRONT VIEW SIDE VIEW
1
2
3
3
2
1
4
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
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2N5191/D
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P1-P3P4-P6

2N5192G

Mfr. #:
Buy 2N5192G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 4A 80V 40W NPN
Lifecycle:
New from this manufacturer.
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