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BSS83PH6327XTSA1

P1-P3P4-P6P7-P9
2012-03-30
Rev. 1.5 Page 1
BSS 83 P
SIPMOS
Small-Signal-Transistor
Features
P-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v
/d
t
rated
Product Summary
Drain source voltage
V
V
DS
-60
Drain-source on-state resistance
R
DS(on)
2
Continuous drain current A
I
D
-0.33
1
2
3
VPS05161
Type
Package
Tape and Reel
BSS 83 P
PG-SOT-23
H
6327: 3000pcs/r.
Marking
YAs
Pin 1
PIN 2
PIN 3
G
S
D
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Value
-0.33
-0.27
A
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
-1.32
Avalanche energy, single pulse
I
D
= -0.33 A ,
V
DD
= -25 V,
R
GS
= 25
9.5
mJ
E
AS
Avalanche energy, periodic limited by
T
jmax
E
AR
0.036
d
v
/d
t
6
Reverse diode d
v
/d
t
I
S
= -0.33 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 °C
P
tot
0.36
W
Operating and storage temperature
T
j
,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class; JESD22-A114-HBM
Class 0
2012-03-30
Rev. 1.5 Page 2
BSS 83 P
Thermal Characteristics
Parameter
Symbol UnitValues
min. max.typ.
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 )
150 K/W-
R
thJS
-
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -250 µA
V
(BR)DSS
-60 - V-
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -80 µA
-1 -1.5 -2
V
GS(th)
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 °C
µA
-1
-100
I
DSS
-0.1
-10
-
-
I
GSS
- -10 -100Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
nA
Drain-source on-state resistance
V
GS
= -4.5 V,
I
D
= -0.27 A
R
DS(on)
- 2 3
Drain-source on-state resistance
V
GS
= -10 V,
I
D
= -0.33 A
R
DS(on)
- 1.4 2
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2012-03-30
Rev. 1.5 Page 3
BSS 83 P
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= -0.27 A
0.24
g
fs
S-0.47
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
C
iss
62 78 pF-
C
oss
- 2419Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
97
C
rss
-
Turn-on delay time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
- 35 ns23
t
d(on)
Rise time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
t
r
- 10671
56 70
t
d(off)
Turn-off delay time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
-
Fall time
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.27 A,
R
G
= 43
t
f
- 61 76
P1-P3P4-P6P7-P9

BSS83PH6327XTSA1

Mfr. #:
Buy BSS83PH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch SOT-23-3
Lifecycle:
New from this manufacturer.
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