Product Standards
Transistors with Built-in Resistor
DRC9124T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
Parameter Symbol Rating Unit
Code SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
1.
2.
3.
Embossed type (Thermo-compression sealing) :
DRC9124T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9124T
DRC5124T in SSMini3 type package
Features
SC-89
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
Marking Symbol:
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Collector current IC 100 mA
Total power dissipation PT 125 mW
Tstg -55 to
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50 V
Parameter
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1 μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0 0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0 0.01 mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 160 460 -
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
1.8 V
0.4 V
22 +30%
k
Input resistance R1
-30%
Junction temperature Tj 150 °C
R1
22
k
+150 °C
Base
Emitter
Collector
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
NH
3 000 pcs / reel (standard)
C
B
R
1
E
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
