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NTJD1155LT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 5
1 Publication Order Number:
NTJD1155L/D
NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
Level−Shift, P−Channel SC−88
The NTJD1155L integrates a P and N−Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The P−Channel device is specifically
designed as a load switch using ON Semiconductor state−of−the−art
trench technology. The N−Channel, with an external resistor (R1),
functions as a level−shift to drive the P−Channel. The N−Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
V
IN
and V
ON/OFF.
Features
• Extremely Low R
DS(on)
P−Channel Load Switch MOSFET
• Level Shift MOSFET is ESD Protected
• Low Profile, Small Footprint Package
• V
IN
Range 1.8 to 8.0 V
• ON/OFF Range 1.5 to 8.0 V
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Input Voltage (V
DSS
, P−Ch) V
IN
8.0 V
ON/OFF Voltage (V
GS
, N−Ch) V
ON/OFF
8.0 V
Continuous Load Current
(Note 1)
Steady
State
T
A
= 25°C
I
L
±1.3
A
T
A
= 85°C ±0.9
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
0.40
W
T
A
= 85°C 0.20
Pulsed Load Current
t
p
= 10 ms
I
LM
±3.9 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
−0.4 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
320
°C/W
Junction−to−Foot – Steady State (Note 1)
R
q
JF
220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
2,3
5
6
SIMPLIFIED SCHEMATIC
SC−88
(SOT−363)
CASE 419B
STYLE 30
MARKING
DIAGRAM
TB = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
D2
1
S1
S2
4
2
D2
G1
5
D1/G2
6
4
Q2
Q1
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8.0 V
170 mW @ −2.5 V
130 mW @ −4.5 V
R
DS(on)
TYP
±1.3 A
I
D
MAXV
(BR)DSS
260 mW @ −1.8 V
Device Package Shipping
†
ORDERING INFORMATION
NTJD1155LT1G SC−88
(Pb−Free)
3000/Tape & Reel
1
TB M G
G
1
http://onsemi.com
NTJD1155L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Q2 Drain−to−Source Breakdown Voltage
V
IN
V
GS2
= 0 V, I
D2
= 250 mA
−8.0 V
Forward Leakage Current I
FL
V
GS1
= 0 V,
V
DS2
= −8.0 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
Q1 Gate−to−Source Leakage Current I
GSS
V
DS1
= 0 V, V
GS1
= ±8.0 V ±100 nA
Q1 Diode Forward On−Voltage V
SD
I
S
= −0.4 A, V
GS1
= 0 V −0.8 −1.1 V
ON CHARACTERISTICS
ON/OFF Voltage
V
ON/OFF
1.5 8.0 V
Q1 Gate Threshold Voltage V
GS1(th)
V
GS1
= V
DS1
, I
D
= 250 mA
0.4 1.0 V
Input Voltage V
IN
V
GS1
= V
DS1
, I
D
= 250 mA
1.8 8.0 V
Q2 Drain−to−Source On Resistance R
DS(on)
V
ON/OFF
= 1.5 V
V
IN
= 4.5 V
I
L
= 1.2 A
130 175 mW
V
IN
= 2.5 V
I
L
= 1.0 A
170 220
V
IN
= 1.8 V
I
L
= 0.7 A
260 320
Load Current I
L
V
DROP
≤ 0.2 V, V
IN
= 5.0 V,
V
ON/OFF
= 1.5 V
1.0
A
V
DROP
≤ 0.3 V, V
IN
= 2.5 V,
V
ON/OFF
= 1.5 V
1.0
1
2,3
5
6
Figure 1. Load Switch Application
4
Q2
Q1
6
C1
C
O
C
I
R1
R2
R2
ON/OFF
V
IN
V
OUT
LOAD
GND
Components
Description Values
R1 Pullup Resistor
Typical 10 kW to 1.0 MW*
R2 Optional Slew−Rate Control
Typical 0 to 100 kW*
C
O
, C
I
Output Capacitance
Usually < 1.0 mF
C1 Optional In−Rush Current Control Typical ≤ 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on.
NTJD1155L
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
0.70
0.25
1.50.5
I
L
(AMPS)
V
DROP
(V)
0.15
0.05
0
Figure 2. V
drop
vs. I
L
@ V
in
= 2.5 V Figure 3. V
drop
vs. I
L
@ V
in
= 4.5 V
0.2
0.0
Figure 4. On−Resistance vs. Input Voltage
V
IN
(VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
−50 0−25 25
1.3
1.1
0.7
50 125100
Figure 6. Normalized On−Resistance Variation
with Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.8
T
J
= 125°C
75 150
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.0
1.7
1.0
8.0
Figure 7. Switching Variation
R2 @ V
in
= 4.5 V, R1 = 20 kW
3.02.5
0.4
0.10
0.20
0.30
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
T
J
= 25°C
0.6
1.5
08
R2 (kW)
44
0
TIME (ms)
28
16
241
t
d(off)
3.0 5.0 7.0
0.06
0.01
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.31
0.16
V
in
= 5 V
0.21
V
in
= 1.8 V
0.9
56
0.45
0.40
0.35
0.50
0.55
0.60
0.65
2.0
T
J
= 125°C
0
0.25
1.50.5
I
L
(AMPS)
V
DROP
(V)
0.15
0.05
0
T
J
= 25°C
1.0 3.02.5
0.10
0.20
0.30
0.45
0.40
0.35
0.50
2.0
T
J
= 125°C
2.0 4.0 6.0
−50 0−25 25 50 12510075 150
0.11
0.26
V
in
= 5 V
V
in
= 1.8 V
I
L
= 1 A
V
ON/OFF
= 1.5 V
Ci = 10 mF
Co = 1 mF
37
t
d(on)
t
r
t
f
40
24
12
36
20
8
32
4
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
0.3
0.1
0.5
0.7
P1-P3P4-P5

NTJD1155LT1G

Mfr. #:
Buy NTJD1155LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 8V +/-1.3A P-Channel w/Level Shift
Lifecycle:
New from this manufacturer.
Delivery:
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