ITA25B3RL

November 2007 Rev 2 1/8
8
ITAxxB3
Bidirectional Transil™ array for data line protection
Features
High surge capability Transil array:
I
PP
= 40 A (8/20 µs)
Peak pulse power: 300 W (8/20 µs)
Separated Input - Output
Up to 9 bidirectional Transil functions
Low clamping factor (V
CL
/V
BR
) at high current
level
Low leakage current
ESD protection up to 15 kV
Complies with the following standards
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883G- Method 3015-7: class 3B
25 kV (human body model)
Applications
Differential data transmission lines protection,
such as :
RS-232
RS-423
RS-422
RS-485
TM: Transil is a trademark of STMicroelectronics
Description
Transil diode arrays provide high overvoltage
protection by clamping action. Their
instantaneous response to transient overvoltages
makes them particularly suited to protect voltage
sensitive devices such as MOS technology and
low voltage supplied IC’s.
The ITA series combines high surge capability
against energetic pulses with high voltage
performance against ESD.
The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltage like ESD by elimination
of the spikes induced by parasitic inductances
created by external wiring.
Figure 1. Functional diagram
SO-20
1
2
3
4
8
7
6
5
20
19
18
17
16
15
14
13
12
11
9
10
GND GND
GND GND
INPUT OUTPUT
INPUT OUTPUT
INPUT OUTPUT
INPUT OUTPUT
INPUT OUTPUT
INPUT OUTPUT
INPUT OUTPUT
INPUT OUTPUT
www.st.com
Characteristics ITAxxB3
2/8
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power (8/20 µs)
(1)
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
T
j
initial = T
amb
300 W
I
PP
Peak pulse current (8/20 µs)
(1)
T
j
initial = T
amb
40 A
I
2
tWire I
2
t value
(1)
0.6 A
2
s
T
j
Maximum operating junction temperature 125 °C
T
stg
Storage temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
αT Voltage temperature coefficient
V
F
Forward voltage drop
C Capacitance
Order code
V
BR
@ I
R
I
RM
@ V
RM
V
CL
@ I
PP
V
CL
@ I
PP
αTC
min. max. 8/20 µs max. 8/20 µs max. max.
(1)
1. Between I/O pin and ground.
(1) (1) (2)
2. Between two input pins at 0 V Bias, F = 1 MHz.
VmAµAVVAVA10
-4
/°C pF
ITA6V5B3 6.5 1 10 5 9.5 10 121 25 4 1100
ITA18B3 181 41521102625 9500
ITA25B3 251 4243110362512420
VBR
VCLVRM
IRM
IPP
I
V
ITAxxB3 Characteristics
3/8
Figure 2. Pulse waveform Figure 3. Typical peak pulse power versus
exponential pulse duration
%I
PP
t
8 µs
100
50
0
20 µs
Pulse waveform 8/20 µs
P
PP
(W)
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
1E+01
1E+02
1E+03
1E+04
T
j
initial=25°C
t
P
(ms) expo
ITA18B3
ITA25B3
ITA6V5B3
Figure 4. Clamping voltage versus peak
pulse current (exponential
waveform 8/20 µs)
Figure 5. Peak current I
DC
inducing open
circuit of the wire for one
input/output versus pulse duration
(typical values)
V
CL
(V)
T
j
initial=25°C
I
PP
(A)
1E+00
1E+01
1E+02
1E+03
1E-01 1E+00 1E+01 1E+02
ITA18B3
ITA25B3
ITA6V5B3
%I
PP
t
r
100
50
0
t
p
t
I
DC
(A)
t
P
(ms)
1E+00
1E+01
1E+02
1E+03
1E-02 1E-01 1E+00 1E+01
Exponential waveform
Figure 6. Junction capacitance versus
reverse applied voltage for one
input/output (typical values)
Figure 7. Relative variation of leakage
current versus junction
temperature
C(pF)
T
j
=25°C
F=1MHz
V
R
(V)
1E+02
1E+03
1E+00 1E+01 1E+02
ITA18B3
ITA25B3
ITA6V5B3
5E+3
1E+3
1E+2
1E+1
0 25 50 75 100 125 150
1E+0
1E-1
T
j
(°C)
I
R
(T )
I (T =25°C)
j
Rj
V
R
=V
RM

ITA25B3RL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
ESD Suppressors / TVS Diodes 25V 300W Bidirect
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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