5V, SUPER MINIMOLD
MEDIUM POWER SI MMIC AMPLIFIER
NEC's UPC2710TB is a Silicon RFIC manufactured using the
NESAT III process. This device is suitable as a PA driver
amplifier for cellular radio and other communication receivers.
The UPC2710TB is pin compatible and has comparable per-
formance to the larger UPC2710T, so it is suitable for use as
a replacement to help reduce system size. The IC is housed in
a 6 pin super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
UPC2710TB
DESCRIPTION
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold or SOT-363 package
• HIGH GAIN:
33 dB TYP
• SATURATED OUTPUT POWER:
+13.5 dBm
• SUPPLY VOLTAGE:
VCC = 4.5 to 5.5 V
GAIN vs.
FREQUENCY and TEMPERATURE
Frequency, f (GHz)
Gain, G
S
(dB)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V, f = 0.5 GHz)
VCC = 5.0 V
TA = -40¡C
TA = +85¡C
35
2.01.00.30.1
25
30
TA = +25¡C
PART NUMBER UPC2710TB
PACKAGE OUTLINE S06
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICC Circuit Current (no signal) mA 16 22 29
GS Small Signal Gain dB 30 33 36.5
fU Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz) GHz 0.7 1.0
∆GS Gain Flatness, f = 0.1 ~ 0.6 GHz dB ±0.8
f = 0.1 ~ 0.8 GHz
PSAT Saturated Output Power dBm +11 +13.5
P1dB Output Power at 1dB Compression Point dBm +7.5
NF Noise Figure dB 3.5 5
RLIN Input Return Loss dB 3 6
RLOUT Output Return Loss dB 9 12
ISOL Isolation dB 34 39
∆GT Gain -Temperature Coefficient dB/°C -0.006
RTH Thermal Resistance (Junction to Ambient) °C/W 325
California Eastern Laboratories