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SPB80N06S2-07

P1-P3P4-P6P7-P8
2003-05-09
Page 1
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
OptiMOS
Power-Transistor
Product Summary
V
DS
55 V
R
DS(on)
6.6 mΩ
I
D
80 A
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO263 -3-2P- TO262 -3-1 P- TO220 -3-1
Marking
2N0607
2N0607
2N0607
Type Package Ordering Code
SPP80N06S2-07 P- TO220 -3-1 Q67060-S6024
SPB80N06S2-07 P- TO263 -3-2 Q67060-S6026
SPI80N06S2-07 P- TO262 -3-1 Q67060-S6037
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
1)
T
C
=25°C
I
D
80
80
A
Pulsed drain current
T
C
=25°C
I
D puls
320
Avalanche energy, single pulse
I
D
=80A, V
DD
=25V, R
GS
=25Ω
E
AS
530 mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
25
Reverse diode dv/dt
I
S
=80A, V
DS
=44V, di/dt=200A/µs, T
jmax
=175°C
dv/dt 6 kV/µs
Gate source voltage V
GS
±20
V
Power dissipation
T
C
=25°C
P
tot
250 W
Operating and storage temperature T
j
, T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-05-09
Page 2
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case
R
thJC
- 0.4 0.6 K/W
Thermal resistance, junction - ambient, leaded
R
thJA
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
55 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
=180µA
V
GS(th)
2.1 3 4
Zero gate voltage drain current
V
DS
=55V, V
GS
=0V, T
j
=25°C
V
DS
=55V, V
GS
=0V, T
j
=125°C
I
DSS
-
-
0.01
1
1
100
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
- 1 100 nA
Drain-source on-state resistance
V
GS
=10V, I
D
=68A
R
DS(on)
- 5.6 6.6
mΩ
1
Current limited by bondwire ; with an R
thJC
= 0.6K/W the chip is able to carry I
D
= 135A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2
Defined by design. Not subject to production test.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2003-05-09
Page 3
SPI80N06S2-07
SPP80N06S2-07,SPB80N06S2-07
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=80A
51 102 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 3400 4540 pF
Output capacitance C
oss
- 880 1100
Reverse transfer capacitance C
rss
- 215 320
Turn-on delay time t
d(on)
V
DD
=30V, V
GS
=10V,
I
D
=80A,
R
G
=3.3Ω
- 16 24 ns
Rise time t
r
- 37 56
Turn-off delay time t
d(off)
- 61 91
Fall time t
f
- 36 54
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=44V, I
D
=80A - 18 24 nC
Gate to drain charge Q
gd
- 35 53
Gate charge total Q
g
V
DD
=44V, I
D
=80A,
V
GS
=0 to 10V
- 86 110
Gate plateau voltage V
(plateau)
V
DD
=44V, I
D
=80A - 4.9 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C - - 80 A
Inv. diode direct current, pulsed
I
SM
- - 320
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=80A - 0.96 1.3 V
Reverse recovery time t
rr
V
R
=30V, I
F
=l
S
,
di
F
/dt=100A/µs
- 55 70 ns
Reverse recovery charge Q
rr
- 96 120 nC
P1-P3P4-P6P7-P8

SPB80N06S2-07

Mfr. #:
Buy SPB80N06S2-07
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 80A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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