OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTLUD3A260PZTBG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 1
1 Publication Order Number:
NTLUD3A260PZ/D
NTLUD3A260PZ
Power MOSFET
−20 V, −2.1 A, mCoolt Dual P−Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6x1.6x0.55 mm for Board Space Saving
• ESD Protected
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• PA Switch
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain-to-Source Voltage V
DSS
−20 V
Gate-to-Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−1.7
A
T
A
= 85°C −1.2
t ≤ 5 s T
A
= 25°C −2.1
Power Dissipa-
tion (Note 1)
Steady
State
T
A
= 25°C
P
D
0.8
W
t ≤ 5 s T
A
= 25°C 1.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−1.3
A
T
A
= 85°C −0.9
Power Dissipation (Note 2) T
A
= 25°C P
D
0.5 W
Pulsed Drain Current
tp = 10 ms
I
DM
−8.0 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−0.6 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
http://onsemi.com
−20 V
290 mW @ −2.5 V
200 mW @ −4.5 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AD= Specific Device Code
M = Date Code
G = Pb−Free Package
AD MG
G
1
390 mW @ −1.8 V
MARKING
DIAGRAM
650 mW @ −1.5 V
(Top View)
(Note: Microdot may be in either location)
−2.1 A
G1
S1
P−Channel MOSFET
D1
UDFN6
CASE 517AT
mCOOLt
1
6
G2
S2
D2
NTLUD3A260PZ
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction-to-Ambient – Steady State (Note 3)
R
θJA
155
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
θJA
100
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
245
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, ref to 25°C
−10 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C −1.0
mA
T
J
= 125°C −10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V ±10
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −1.0 V
Negative Threshold Temp. Coefficient V
GS(TH)
/T
J
2.8 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −2.0 A 160 200
mW
V
GS
= −2.5 V, I
D
= −1.2 A 226 290
V
GS
= −1.8 V, I
D
= −0.24 A 300 390
V
GS
= −1.5 V, I
D
= −0.18 A 390 650
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −1.5 A 3.7 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= −10 V
300
pF
Output Capacitance C
OSS
34
Reverse Transfer Capacitance C
RSS
29
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −10 V;
I
D
= −1.7 A
4.2
nC
Threshold Gate Charge Q
G(TH)
0.3
Gate-to-Source Charge Q
GS
0.7
Gate-to-Drain Charge Q
GD
1.1
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time t
d(ON)
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −1.5 A, R
G
= 1 W
17.4
ns
Rise Time t
r
32.3
Turn-Off Delay Time t
d(OFF)
149
Fall Time t
f
74
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD
V
GS
= 0 V,
I
S
= −0.6 A
T
J
= 25°C 0.8 1.2
V
T
J
= 125°C 0.68
Reverse Recovery Time t
RR
V
GS
= 0 V, dis/dt = 100 A/ms,
I
S
= −1.0 A
10.6
ns
Charge Time t
a
8.7
Discharge Time t
b
1.9
Reverse Recovery Charge Q
RR
5.1 nC
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLUD3A260PZ
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2.5 3.02.01.51.00.50
0
1
2
4
5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
4.03.5 4.53.02.52.01.51.0
0.10
0.20
0.30
0.40
0.50
0.70
0.80
98754321
0.100
0.200
0.300
0.500
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
0.9
1.1
1.2
1.3
1.4
1.6
20141062
100
1000
10,000
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
−I
DSS
, LEAKAGE (nA)
V
DS
≤ −10 V
3
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.60
I
D
= −2.0 A
T
J
= 25°C
610
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.400
T
J
= 25°C
−1.8 V
−2.5 V
V
GS
= −4.5 V
V
GS
= −4.5 V
I
D
= −2.0 A
150
1.0
1.5
T
J
= 85°C
T
J
= 125°C
18128416
43210
0
2
4
6
8
10
V
GS
= −4.5 VT
J
= 25°C
−3.5 V
−3.0 V
−2.5 V
−4.0 V
−2.0 V
1
3
5
7
9
−1.8 V
−1.5 V
P1-P3P4-P6

NTLUD3A260PZTBG

Mfr. #:
Buy NTLUD3A260PZTBG
Manufacturer:
ON Semiconductor
Description:
MOSFET POWER MOSFET 20V 2A 200 M
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet