PMEG4030ETP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 10 October 2011 3 of 13
NXP Semiconductors
PMEG4030ETP
40 V, 3 A low VF MEGA Schottky barrier rectifier
5. Limiting values
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[6] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage T
j
=25°C - 40 V
I
F(AV)
average forward current square wave; δ = 0.5; f = 20 kHz;
T
amb
≤ 85 °C
[1]
-3A
square wave; δ = 0.5; f = 20 kHz;
T
sp
≤ 165 °C
-3A
I
FSM
non-repetitive peak forward
current
square wave; t
p
=8ms; T
j(init)
=25°C - 50 A
P
tot
total power dissipation T
amb
≤ 25 °C
[2][3]
- 750 mW
[4][3]
- 1250 mW
[1][3]
- 2500 mW
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][2][3]
- - 200 K/W
[1][4][3]
- - 120 K/W
[1][5][3]
--60K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[6]
--12K/W
