Silicon Bridge Rectifiers
Page 1
REV:A
KBU10005-G Thru. KBU1010-G
Parameter
Symbol
Unit
Dimensions in inches and (millimeter)
QW-BBR62
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (With heatsink Note2)
Rectified Current @Tc=100°C (without hestsink)
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
Operating Temperature Range
Storage Temperature Range
Reverse Voltage: 50 to 1000V
Forward Current: 10.0A
RoHS Device
Maximum ratings and electrical characteristics
O
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
50
35
50
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
TJ
TSTG
10.0
240
1.0
10.0
-55 to +125
-55 to +150
V
V
V
A
A
V
μA
O
C
O
C
KBU
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Notes:
Features
-Surge overload rating - 240 amperes peak.
Mechanical Data
Maximum Forward Voltage at 5.0A
-Ideal for printed circuit board.
3.0
500
TJ
O
C
DC Blocking Voltage @TJ=125°C
Maximum Reverse Current
At Rate
@TJ=25°C
1. Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.
KBU
10005-G
KBU
1001-G
KBU
1002-G
KBU
1004-G
KBU
1006-G
KBU
1008-G
KBU
1010-G
-Epoxy: U/L 94-V0 rate flame retardant.
-Mounting position: Any
-Case: Molded plastic, KBU
-Weight: 7.40grams
0.935(23.7)
0.895(22.7)
0.600(16.8)
0.700(17.8)
300
(7.5)
(25.4)
1.00
MIN.
.071 (1.8)
.08 7 (2.2)
0.220(5.6)
0.256(6.5)
0.276(7.0)
0.15ΦX23L
HOLE TH RU
0.157(4.0)*45°C
0.180(4.6)
0.048(1.2)TYP.
0.052(1.3)DIA.
0.780(19.8)
0.740(18.8)
(3.8ΦX5.7L)
