ALD1108E/ALD1110E Advanced Linear Devices 7 of 14
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
+10
+8
+6
+4
+2
-2
0
-10
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
-50 -25 0 25 50 12510075
AMBIENT TEMPERATURE (°C)
-8
-6
-4
REPRESENTATIVE UNITS
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
DRAIN SOURCE ON CURRENT (µA)
5
4
3
2
1
0
GATE SOURCE VOLTAGE (V)
0.1
1
10010 1000 10000
V
DS
= 0.5V
T
A
= +125°C
V
DS
= 0.5V
T
A
= +25°C
V
DS
= 5V
T
A
= +25°C
V
DS
= 5V
T
A
= +125°C
V
DS
I
DS(ON)
D
V
GS
S
V
DS
= R
ON
• I
DS(ON)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
5
4
3
2
1
0
DRAIN SOURCE ON CURRENT
(mA)
543210
70°C
125°C
-25°C
0°C
-55°C
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
100
50
0
1.81.0
1.2
2.0
1.6
1.4
DRAIN SOURCE ON CURRENT
( µA)
Zero Temperature
Coefficient (ZTC)
{
{
{
V
t
= 1.2V
V
t
= 1.4V
V
t
= 1.0V
- 25°C
- 25°C
- 25°C
ZTC
125°C
125°C
ZTC
125°C
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
4
3
2
1
0
543210
T
A
= -55°C
T
A
= +50°C
DRAIN SOURCE ON CURRENT
(mA)
OUTPUT VOLTAGE
(V)
T
A
= 0°C
V
t
= 1.000V
V
DS
= V
GS
T
A
= +125°C
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
ON - RESISTANCE (K)
0.1 1.0 10010 1000 10000
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
0.1
1.0
100
10
1000
10000
V
DS
= R
ON
• I
DS(ON)
V
GS
= +0.9V to +5.0V
V
DS
= 5.0V
V
DS
= 0.5V
V
DS
D
V
GS
S
I
DS(ON)
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
ALD1108E/ALD1110E Advanced Linear Devices 8 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
-50 -25 0 25 50 12510075
4
3
2
1
0
-1
-2
-3
-4
OFFSET VOLTAGE (mV)
REPRESENTATIVE UNITS
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
5.0
4.0
3.0
2.0
1.0
0.1
1
10010 1000
10000
+25°C
GATE SOURCE VOLTAGE (V)
ON - RESISTANCE (K)
+125°C
V
DS
I
DS(ON)
D
V
GS
S
0.0V V
DS
5.0V
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
DRAIN SOURCE ON CURRENT (µA)
1 10 100 1000
-55°C T
A
+125°C
0
-5
-2.5
2.5
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT (pA)
-50
-25
0
25 50 12510075
500
400
300
200
600
100
0
AMBIENT TEMPERATURE (°C)
I
GSS
ALD1108E/ALD1110E Advanced Linear Devices 9 of 14
8 Pin Plastic SOIC Package
SOIC-8 PACKAGE DRAWING
Millimeters
Inches
Min Max Min MaxDim
A
A
1
b
C
D-8
E
e
H
L
S
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0°
0.25
ø
L
C
H
S (45°)
ø
e
A
A
1
b
D
S (45°)
E

ALD1108ESCL

Mfr. #:
Manufacturer:
Advanced Linear Devices
Description:
MOSFET Quad EPAD(R) Prog
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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