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APTGT50TL601G
P1-P3
P4-P6
P7-P8
APTGT50TL601G
APTGT50TL601G– Rev1 October, 2012
www.microsemi
.com
4-8
SP1 Package outline
(d
imen
sions in
mm)
See application note 1904 - Mounting Instructions
for SP1 Power Modules
on www.
microsemi.com
Q1 to Q4 Typical performance curve
Ha
r
d
sw
i
tch
in
g
0
20
40
60
80
02
0
4
0
6
0
8
0
I
C
(A)
Fm
ax, O
p
erat
ing
F
req
uen
cy (
kHz
)
V
CE
=300V
D=
50
%
R
G
=8.2
Ω
T
J
=1
5
0°
C
T
c
=85°
C
Ope
r
at
in
g
F
r
e
q
ue
n
cy vs
C
ol
le
ct
o
r
C
ur
r
e
n
t
APTGT50TL601G
APTGT50TL601G– Rev1 October, 2012
www.microsemi
.com
5-8
Output Character
istics (V
GE
=15V)
T
J
=25°C
T
J
=25°C
T
J
=125°C
T
J
=150°C
0
20
40
60
80
100
00
.
511
.
522
.
53
V
CE
(V)
I
C
(A)
Output Character
istics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
20
40
60
80
100
00
.
511
.
5
22
.
533
.
5
V
CE
(V)
I
C
(A)
T
J
= 150°C
Transfert Characteristi
cs
T
J
=25°C
T
J
=25°
C
T
J
=150°C
0
20
40
60
80
100
56789
1
0
1
1
1
2
V
GE
(V)
I
C
(A)
Energy losses vs Collector Curre
nt
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
0
2
04
06
08
0
1
0
0
I
C
(A
)
E (mJ)
V
CE
= 300V
V
GE
= 15V
R
G
= 8.2
Ω
T
J
= 150°C
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
1
52
53
54
55
56
5
Gate Resistance (ohm
s)
E (mJ)
V
CE
= 300V
V
GE
=15V
I
C
= 50A
T
J
= 150°C
Swi
tching E
nergy Losses vs Gate Resistance
Reverse Bias Safe Oper
ating Area
0
25
50
75
100
125
0
100
200
300
400
500
600
700
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=150°C
R
G
=8.2
Ω
maxim
um Effective Transi
ent Thermal I
mpedan
ce, Junction
to Case vs Pulse Dur
ation
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Recta
ngular Pulse D
uration in Seconds
Thermal Impedance (°C/W)
APTGT50TL601G
APTGT50TL601G– Rev1 October, 2012
www.microsemi
.com
6-8
CR1 to CR4
Typica
l performa
nce curv
e
Energy
losses vs Collector Current
0
0.25
0.5
0.75
1
0
1
02
03
04
05
06
0
I
F
(A
)
E (mJ)
V
CE
= 300V
V
GE
= 15V
R
G
= 10
Ω
T
J
= 150°C
0
0.25
0.5
0.75
1
0
1
02
03
04
05
06
07
0
Gate Resistance (ohms)
E (mJ)
V
CE
= 300V
V
GE
=15V
I
C
= 30A
T
J
= 150°C
Switching
Energy
L
osses vs Gate Resistance
maximum
Effective Transient Thermal Imp
edance, Junction to Case vs Pulse Dur
ation
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.5
1
1.5
2
2.5
3
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Durati
on in Seconds
Thermal
Impedance
(°C/W)
Forward Ch
aracteristic of dio
de
T
J
=25°C
T
J
=150°C
0
10
20
30
40
50
60
0
0.
4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
F
(A)
P1-P3
P4-P6
P7-P8
APTGT50TL601G
Mfr. #:
Buy APTGT50TL601G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules DOR CC8047
Lifecycle:
New from this manufacturer.
Delivery:
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