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AO4482
P1-P3
P4-P6
TYPICA
L ELECTRICAL A
ND THERMAL CHA
RA
CTERISTICS
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Q
g
(nC)
Figure 7:
Gate-Charge Cha
racteristics
V
GS
(Volts)
0
600
1200
1800
2400
3000
0
20
40
60
80
100
V
DS
(Volts)
Figure 8:
Capacita
nce Charact
eristics
Capacitanc
e (pF)
C
iss
C
oss
C
rss
V
DS
=50V
I
D
=6A
1
10
100
1000
10000
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11:
Single
Pulse Pow
er Rating Jun
ction-to-Ambient (Note F)
Power (W)
T
A
=25°
C
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
1000
V
DS
(Volts)
I
D
(Amps)
Figure 10: Maximum Forw
a
rd Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°
C
T
A
=25°
C
100
µ
s
10ms
1
10
100
1
10
100
1000
Time in a
valanche, t
A
(
µ
µ
µ
µ
s)
Figure 9:
Single Pul
se Avalanche capabili
ty (Note
C)
I
AR
(A) Peak Avala
nche Current
T
A
=25°
C
T
A
=150°
C
T
A
=100°
C
T
A
=125°
C
Rev 3 : Dec 2010
www.aosmd.com
Page 4 of 6
TYPICA
L ELECTRICAL A
ND THERMAL CHA
RA
CTERISTICS
0.001
0.01
0.1
1
10
0.00001
0
.0001
0
.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12:
Normaliz
ed M
aximum
Transient
Thermal Im
pedance
(Note F)
Z
θ
θ
θ
θ
JA
Normalized
Transient
Thermal Res
istance
Single Pu
lse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
T
on
T
P
D
In descend
ing ord
er
D=0.5, 0.3, 0
.1, 0.05
, 0.02, 0
.01, si
ngle pu
lse
R
θ
JA
=75°
C/W
Rev 3 : Dec 2010
www.aosmd.com
Page 5 of 6
-
+
VD
C
Ig
V
d
s
D
U
T
-
+
VD
C
V
g
s
V
g
s
1
0
V
Q
g
Q
g
s
Q
g
d
C
h
a
r
g
e
G
a
te
C
h
a
r
g
e
T
e
s
t
C
ir
c
u
it
&
W
a
v
e
f
o
r
m
-
+
VD
C
D
U
T
V
d
d
V
g
s
V
d
s
V
g
s
R
L
R
g
V
g
s
V
d
s
1
0
%
9
0
%
R
e
s
is
tiv
e
S
w
i
t
c
h
i
n
g
T
e
s
t
C
ir
c
u
it
&
W
a
v
e
f
o
rm
s
t
t
r
d(
on
)
t
on
t
d(
of
f)
t
f
t
of
f
V
d
d
V
g
s
Id
V
g
s
R
g
D
U
T
-
+
V
DC
L
V
g
s
V
d
s
Id
V
g
s
B
V
I
U
n
c
la
m
p
e
d
I
n
d
u
c
ti
v
e
S
w
i
t
c
h
i
n
g
(
U
I
S
)
T
e
s
t
C
i
r
c
u
it
&
W
a
v
e
fo
r
m
s
Ig
V
g
s
-
+
VD
C
D
U
T
L
V
d
s
V
g
s
V
d
s
Is
d
Is
d
D
i
o
d
e
R
e
c
o
v
e
r
y
T
e
s
t
C
i
r
c
u
it
&
W
a
v
e
f
o
r
m
s
V
d
s
-
V
d
s
+
I
F
AR
DS
S
2
E
=
1
/
2
L
I
d
I/
d
t
I
RM
rr
V
d
d
V
d
d
Q
=
-
I
d
t
AR
AR
t
rr
Rev 3
: Dec 2010
www.aosmd.com
Page 6 of 6
P1-P3
P4-P6
AO4482
Mfr. #:
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Manufacturer:
Description:
MOSFET N-CH 100V 6A 8SOIC
Lifecycle:
New from this manufacturer.
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