BUK96180-100A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 26 April 2011 6 of 13
NXP Semiconductors
BUK96180-100A
N-channel TrenchMOS logic level FET
T
j
= 25 °C T
j
= 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
T
j
= 25 °; I
D
= 25 A
V
DS
> I
D
x R
DSon
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
10
15
5
20
25
I
D
(A)
0
V
DS
(V)
0108462
003aaf335
V
GS
(V) = 10
5
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
160
200
240
R
DS(on)
(mΩ)
120
I
D
(A)
21210684
003aaf336
3.2
3.4
3.6
3.8
4
5
3
150
210
190
170
230
R
DS(on)
(mΩ)
V
GS
(V)
311957
003aaf337
4
8
12
I
D
(A)
0
V
GS
(V)
08624
T
j
= 175 °C
T
j
= 25 °C
