SST12LP07A-QXBE

A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS75011A 10/11
Product Brief
www.microchip.com
Features
High Gain:
Typically 28 dB gain across 2.4–2.5 GHz over
temperature 0°C to +85°C
High linear output power (at 3.3V):
>28 dBm P1dB
~2.5% added EVM up to 20 dBm for
54 Mbps 802.11g signal
Meets 802.11g OFDM ACPR requirement up to
24 dBm
Meets 802.11b ACPR requirement up to 24 dBm
High power-added efficiency/Low operating cur-
rent for both 802.11 b/g applications
~30.8% @ P
OUT
= 23.5 dBm for both 802.11g and
802.11b
Low shut-down current (~2µA)
High temperature stability
~1.5 dB power variation between -40°C to +85°C
~2.5 dB gain variation between -40°C to +85°C
Temperature and load insensitive on-chip power
detector
20 dB dynamic range
Simple input/output matching
Packages available
12-contact XQFN – 2mm x 2mm x 0.45mm
All devices are RoHS compliant
Applications
WLAN (IEEE 802.11b/g/n)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
Block Diagram
Product Ordering
Valid combinations for SST12LP07A
SST12LP07A-QXBE
SST12LP07A Evaluation Kits
SST12LP07A-QXBE-K
Note: Valid combinations are those products in mass produc-
tion or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
RF
IN
V
CCB
V
REF
DET
V
CC1
V
CC2
RF
OUT
75011 B1.0
Bias Circuit
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. It is easily configured for high-power applications with excel-
lent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band
and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent
linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54
Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended
power detector, providing a reliable solution to board-level power control. The
SST12LP07A is offered in a 12-contact XQFN package.
©2011 Silicon Storage Technology, Inc. DS75011A 10/11
2
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07A
Product Brief
A
Microchip Technology Company
Contact Information
Thank you for your interest in Microchip RF products. The data sheet for this device contains proprie-
tary information. To obtain a copy of the data sheet, contact your local Microchip sales representative
or distributor at the link below.
Global Sales and Distribution
Table 1:Revision History
Revision Description Date
A
Initial release of Product Brief
Oct 2011
©
2011 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Tech-
nology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc.
A Microchip Technology Company
www.microchip.com
ISBN:978-1-61341-736-2

SST12LP07A-QXBE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Amplifier 2.4-2.5GHz 3.3V 220mA ICC 802.11 b/g
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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