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FGH20N6S2

P1-P3P4-P6P7-P8
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves (Continued)
E
ON2
, TURN-ON ENERGY LOSS ( µJ)
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
246810 140
300
250
350
50
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 25Ω, L = 500µH, V
CE
= 390V
E
OFF
TURN-OFF ENERGY LOSS (µJ)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
246810 14012
150
100
200
0
350
300
250
50
R
G
= 25Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
6
7
8
9
10
2 4 6 8 10 140
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
11
12
13
12
R
G
= 25Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
2 4 6 8 10 14012
0
5
10
15
20
25
30
35
R
G
= 25Ω, L = 500µH, V
CE
= 390V
80
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
140
120
100
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2 4 6 8 10 14012
R
G
= 25Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
T
J
= 25
o
C, V
GE
= 10V or 15V
T
J
= 125
o
C, V
GE
= 10V or 15V
2 4 6 8 10 14012
60
40
120
100
80
R
G
= 25Ω, L = 500µH, V
CE
= 390V
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Figure 13. Transfer Characteristic Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
6 8 10 12 14 164
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6Ω, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5 10152025 35030
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
R
G
= 25Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
I
CE
= 14A
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
5025 75 100 125 150
R
G
, GATE RESISTANCE (Ω)
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1 10 100 1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 1020304050
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60 70 80 90 100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8101112 16
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, T
J
= 25
o
C
3.6
7131415
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves (Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
, NORMALIZED THERMAL RESPONSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θ
JC
X R
θ
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
R
G
= 25
Ω
L = 500
µ
H
V
DD
= 390V
+
-
FGH20N6S2D
DIODE TA49469
FGH20N6S2
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
P1-P3P4-P6P7-P8

FGH20N6S2

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Manufacturer:
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Description:
IGBT 600V 28A 125W TO247
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