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SI6924AEDQ-T1-GE3

P1-P3P4-P6P7-P7
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4
Document Number: 72215
S-81056-Rev. B, 12-May-08
Vishay Siliconix
Si6924AEDQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V
GS
= 5 thru 2,5 V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.00
0.01
0.02
0.03
0.04
0.05
048121620
V
GS
= 4.5 V
V
GS
= 2.5 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 3 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 4.6 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
Transfer Characteristics
Gate Charge
Source-Drain Diode Forward Voltage
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
1
2
3
4
5
01234567
V
DS
= 10 V
I
D
= 4.6 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
1
10
20
0 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Document Number: 72215
S-81056-Rev. B, 12-May-08
www.vishay.com
5
Vishay Siliconix
Si6924AEDQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
I
D
= 4.6 A
- On-Resistance (Ω)R
DS(on)
V - Gate-to-Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
0.10
012345
I
D
= 4.6 A
V
GS
- Gate-to-Source Voltage (V)
0.001
0
1
50
60
10
30
100.01
Power (W)
Time (s)
20
40
0.1
Threshold Voltage
Safe Operating Area
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
100
1
0.1 1 10 100
0.01
10
1 ms
- Drain Current (A)I
D
0.1
Limited
by R *
DS(on)
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
10 s
1 s
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
1 100 600
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 96 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
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Document Number: 72215
S-81056-Rev. B, 12-May-08
Vishay Siliconix
Si6924AEDQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72215.
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P7

SI6924AEDQ-T1-GE3

Mfr. #:
Buy SI6924AEDQ-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 28V 4.1A 8-TSSOP
Lifecycle:
New from this manufacturer.
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