May 2010 Doc ID 12259 Rev 2 1/25
25
PD55008-E
PD55008S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 8 W with 17dB gain @ 500 MHz/12.5 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies up to 1 GHz.
The device boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology
mounted in the first true SMD plastic RF power
package, PowerSO-10RF. The device’s superior
linearity performance makes it an ideal solution
for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order code Package Packing
PD55008-E PowerSO-10RF (formed lead) Tube
PD55008S-E PowerSO-10RF (straight lead) Tube
PD55008TR-E PowerSO-10RF (formed lead) Tape and reel
PD55008STR-E PowerSO-10RF (straight lead) Tape and reel
www.st.com