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BC817-16W RFG

P1-P3P4-P6
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Case: SOT- 323 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.005 grams (approximately)
SYMBOL UNIT
P
D
mW
V
CBO
V
V
CEO
V
V
EBO
V
I
C
A
R
θJA
K/W
T
J
, T
STG
°C
Notes: 1. Transistor mounted on a FR4 printed-circuit board
SYMBOL UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
V
I
CBO
nA
Emitter Cut-off Current
I
EBO
nA
I
B
= 50 mA V
CE(sat)
V
Transition Frequency
V
CE
= 5 V I
C
= 10 mA
f = 100MHz
f
T
MHz
Document Number: DS_S1404010 Version: D15
Collector Cut-off Current
at I
C
= 10 μA
at I
C
= 10 mA
at I
E
= 10 μA
MIN MAX
at V
CB
= 20 V
-
-
-
100
50
45
5
-
at V
EB
= 5 V
Collector-Emitter Saturation Voltage
- 100
at I
C
= 500mA
-0.7
100 -
DC Current Gain
at V
CE
= 1 V , I
C
= 100 mA
at V
CE
= 1 V , I
C
= 500 mA
-16W
-25W
-40W
h
FE
40
100
160 400
250 600
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance, Junction to Ambient
PARAMETER
250
PARAMETER
Junction and Storage Temperature Range
50
45
5
0.5
625
-55 to +150
Power Dissipation 200
- Epitaxial planar die construction
- Surface mount device type
Taiwan Semiconductor
VALUE
Small Signal Product
200mW, NPN Small Si
g
nal Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
BC817-16W/25W/40W
MECHANICAL DATA
FEATURES
SOT-323
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1404010 Version: D15
BC817-16W/25W/40W
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140
P
tot
(mW)
T
S
(
o
C)
Fig.1Total Power Dissipation P
tot
= f (T
S
)
0.1
1.0
10.0
100.0
1000.0
1 10 100 1000 10000 100000 1000000
Fig.2 Permissible Pulse Load R
θJA
= f (tp)
tp (μs)
R
θJA
(K/W)
0.5
0.2
0.1
0.05
0.02
0.01
D=0
1
10
100
1000
1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06
P
totmax
/P
totDC
tp (s)
Fig.3 Permissible Pulse Load
P
totmax
/ P
totDC
= f (tp)
tp (μs)
0.005
0.01
0.02
0.05
D=0
0.5
0.2
0.1
1
10
100
1000
10000
100000
0 50 100 150
I
CBO
(nA)
T
A
(
o
C)
Fig. 4 Coolector Cutoff Current I
CBO
= f (T
A
)
V
CB
=25V
max
typ
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1404010 Version: D15
BC817-16W/25W/40W
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
10
100
1000
1 10 100 1000
f
T
(MHz)
I
C
(mA)
Fig. 6 Transition Frequency f
T
= f (I
C
)
V
CE
= 5 V
0.1
1
10
100
1000
0.0 0.2 0.4 0.6 0.8
I
C
(mA)
V
CEsat
(V)
Fig. 8 Collector-Emitter Saturation
Voltage
25
o
C
-50
o
C
150
o
C
1
10
100
1000
0.1 1.0 10.0 100.0 1000.0
h
FE
I
C
(mA)
100
o
C
25
o
C
-50
o
C
Fig.5 DC Current Gain h
FE
= f (I
C
)
V
CE
= 1V
0.1
1.0
10.0
100.0
1000.0
01234
I
C
(mA)
V
BEsat
(V)
150
o
C
25
o
C
-50
o
C
Fig. 7 Base-Emitter Saturation Voltage
I
C
= f (V
BEsat
), h
FE
= 10
P1-P3P4-P6

BC817-16W RFG

Mfr. #:
Buy BC817-16W RFG
Manufacturer:
Taiwan Semiconductor
Description:
Bipolar Transistors - BJT Transistor 200mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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