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SI3410DV-T1-E3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 69254
S09-2110-Rev. B, 12-Oct-09
Vishay Siliconix
Si3410DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
T
J
= 150 °C
- 0.9
- 0.6
- 0.3
0
0.3
0.6
- 50 - 25 0 25 50 75 100 125 150
Variance (V)
V
GS(th)
T
J
- Temperature (°C)
I
D
= 250 µA
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Temperature
Single Pulse Power, Junction-to-Ambient
0
0.02
0.04
0.06
0.08
0.10
012345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 125 °C
T
A
= 25 °C
0
12
24
36
4
8
60
Power (W)
Time (s)
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
- Drain Current (A)I
D
0.1 1 10 100
T
A
= 25 °C
Single Pulse
1 s, 10 s
10 ms
100 ms
DC
Limited by R *
DS(on)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1 ms
Document Number: 69254
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
5
Vishay Siliconix
Si3410DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
5
7
10
12
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Foot
0
1
2
3
4
5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 69254
S09-2110-Rev. B, 12-Oct-09
Vishay Siliconix
Si3410DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69254
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.001
0.1
1
10
-3
10
-2
000101110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P11

SI3410DV-T1-E3

Mfr. #:
Buy SI3410DV-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 8A 6-TSOP
Lifecycle:
New from this manufacturer.
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