SiZ328DT
www.vishay.com
Vishay Siliconix
S17-1505-Rev. A, 02-Oct-17
1
Document Number: 76059
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 25 V (D-S) MOSFETs
FEATURES
• TrenchFET
®
Gen IV power MOSFETs
• 100 % R
g
and UIS tested
• Optimized Q
gs
/Q
gs
ratio improves switching
characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
•POL
• Synchronous buck converter
• Telecom DC/DC
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W for channel-1 and 69 °C/W for channel-2
g. T
C
= 25 °C
PRODUCT SUMMARY
CHANNEL-1 CHANNEL-2
V
DS
(V) 25 25
R
DS(on)
max. () at V
GS
= 10 V 0.0150 0.0100
R
DS(on)
max. () at V
GS
= 4.5 V 0.0250 0.0150
Q
g
typ. (nC) 2.1 3.5
I
D
(A)
g
25.3 30
a
Configuration Dual
PowerPAIR
®
3 x 3
Top View
1
3 mm
3 mm
Bottom View
4
D
1
1
G
1
2
D
1
3
D
1
S
2
5
G
2
8
S
2
7
S
2
6
D
1
S
1
/D
2
(Pin 9)
D
1
S
2
N-Channel 2
MOSFET
G
1
S
1
/D
2
G
2
N-Channel 1
MOSFET
ORDERING INFORMATION
Package PowerPAIR 3 x 3
Lead (Pb)-free and halogen-free SiZ328DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage V
DS
25 25
V
Gate-source voltage V
GS
+16, -12 +16, -12
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
25.3 30
a
A
T
C
= 70 °C 20.2 25.5
T
A
= 25 °C 11.1
b, c
15
b, c
T
A
= 70 °C 8.9
b, c
12
b, c
Pulsed drain current (100 μs pulse width) I
DM
40 50
Continuous source drain diode current
T
C
= 25 °C
I
S
12.6 13.5
T
A
= 25 °C 2.4
b, c
3
b, c
Single pulse avalanche current
L = 100 mH
I
AS
711
Single pulse avalanche energy E
AS
2.5 6.1 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
15 16.2
W
T
C
= 70 °C 9.6 10.4
T
A
= 25 °C 2.9
b, c
3.6
b, c
T
A
= 70 °C 1.8
b, c
2.3
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
CHANNEL-1 CHANNEL-2
UNIT
TYP. MAX. TYP. MAX.
Maximum junction-to-ambient
b, f
t 10 s R
thJA
35 43 28 35
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
6.7 8.3 6.3 7.7