MMT10B310T3G

© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 8
1 Publication Order Number:
MMT10B230T3/D
MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
Outstanding High Surge Current Capability: 100 A 10x1000 msec
Guaranteed at the extended temp range of −20°C to 65°C
The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Complies with GR1089 Second Level Surge Spec at 500 A
2x10 msec Waveforms
Indicates UL Registered − File #E210057
Pb−Free Packages are Available
BIDIRECTIONAL TSPD
100 AMP SURGE
265 thru 365 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MT1 MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
(
)
MARKING DIAGRAMS
AYWW
RPDx G
G
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
A = Assembly Location
Y = Year
WW = Work Week
RPDx = Device Code
x = F, G, or J
G = Pb−Free Package
(Note: Microdot may be in either location)
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Off−State Voltage − Maximum
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
DM
"170
"200
"270
V
Maximum Pulse Surge Short Circuit Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2) (−20°C to +65°C)
2 x 10 msec
10 x 700 msec
10 x 1000 msec
I
PPS1
I
PPS2
I
PPS3
"500
"180
"100
A(pk)
Maximum Non−Repetitive Rate of Change of On−State Current
Double Exponential Waveform,
R = 2.0, L = 1.5 mH, C = 1.67 mF,
I
pk
= 110A
di/dt "100
A/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Instantaneous Peak Power Dissipation (I
pk
= 100 A, 10x1000 msec @ 25°C)
P
PK
4000 W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ORDERING INFORMATION
Device Package Shipping
MMT10B230T3 SMB
(12mm) Tape & Reel
2500 Units per Reel
MMT10B230T3G SMB
(Pb−Free)
MMT10B260T3 SMB
MMT10B260T3G SMB
(Pb−Free)
MMT10B310T3 SMB
MMT10B310T3G SMB
(Pb−Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V) MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
(+65°C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
V
(BO)
265
320
365
290
340
400
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms), MMT10B230T3, G
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3) MMT10B260T3, G
MMT10B310T3, G
(+65°C)
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
V
(BO)
265
320
365
290
340
400
V
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.08 %/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT10B230T3, G
MMT10B260T3, G
MMT10B310T3, G
V
(BR)
190
240
280
V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
mA
On−State Voltage (I
T
= 1.0 A)
(PW 300 ms, Duty Cycle 2%) (Note 3)
V
T
1.53 5.0 V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
I
BO
260 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 Volts; I
T
(Initiating Current) = "1.0 A
I
H
150 270 mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000
V/ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
C
O
65
160
200
pF
3. Measured under pulse conditions to reduce heating.
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)

MMT10B310T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) 100A Surge 365V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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