OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CRS01(TE85L,Q,M)

P1-P3P4-P5
CRS01
2013-11-01
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS01
High Speed Rectifier Applications
• Low forward voltage: V
FM
= 0.37 V @ I
FM
= 0.7 A
• Average forward current: I
F (AV)
= 1.0 A
• Repetitive peak reverse voltage: V
RRM
= 30 V
• Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
30 V
Average forward current I
F(AV)
1.0 (Note 1) A
20 (50 Hz)
Peak one cycle surge forward current
(non-repetitive)
I
FSM
22 (60 Hz)
A
Junction temperature T
j
−40~125 °C
Storage temperature T
stg
−40~150 °C
Note 1: Tℓ = 98°C: Rectangular waveform (α = 180°), V
R
= 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Typ. Max Unit
V
FM (1)
I
FM
= 0.1 A 0.25 ⎯
V
FM (2)
I
FM
= 0.7 A 0.33 0.37
Peak forward voltage
V
FM (3)
I
FM
= 1.0 A 0.36 ⎯
V
Repetitive peak reverse current I
RRM
V
RRM
= 30 V ⎯ 1.5 mA
Junction capacitance C
j
V
R
= 10 V, f = 1.0 MHz 40.0 ⎯ pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
⎯ 70
Thermal resistance (junction to ambient) R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯ 140
°C/W
Thermal resistance (junction to lead) R
th (j-ℓ)
⎯ ⎯ 20 °C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
Start of commercial production
1998-06
CRS01
2013-11-01
2
Marking
Abbreviation Code Part No.
S1 CRS01
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
This device is V
F
-I
RRM
trade-off type, lower V
F
higher I
RRM
; therefore, thermal runaway might occur when
voltage is applied. Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
V
RRM
: Use this rating with reference to the above. V
RRM
has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
I
F(AV)
: We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I
F(AV)
and T
j
be below 100°C. When using this device, take the margin into consideration by
using an allowable Ta max - I
F(AV)
curve.
I
FSM
: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
T
j
: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a T
j
of below 100°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
Please refer to the Rectifiers Databook for further information.
2.8
1.2
1.2
Unit: mm
CRS01
2013-11-01
3
Transient thermal impedance
r
th (j-a)
(°C/W)
Maximum allowable lead temperature
Tℓ max (°C)
Instantaneous forward voltage V
F
(V)
i
F
– v
F
Instantaneous forward current i
F
(A)
Average forward current I
F (AV)
(A)
P
F (AV)
– I
F (AV)
Average forward power dissipation
P
F (AV)
(W)
Average forward current I
F (AV)
(A)
Ta ma x – I
F (AV)
Ceramic substrate (substrate size: 50 mm × 50 mm)
Maximum allowable temperature
Ta max ( ° C )
Average forward current I
F (AV)
(A)
Tℓ max – I
F (AV)
Time t (s)
r
th (j-a)
– t
0 0.2
0.1
1
10
0.4 0.6 0.8 1.0 1.2
25°C
T
j
= 125°C
0
0
40
0.2 0.6 0.8 1.0 1.4 1.6
20
60
120
100
0.4 1.2
80
α = 180°
DC
360° 0°
Rectangular waveform
α
V
R
= 15 V
I
F (AV)
Conduction angle α
②
①
① Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
1
10
1000
10000
0.001 0.01 0.1 100 1 10
100
0 0.2 0.6 0.8 1.0 1.4 1.60.4 1.2
α = 60°
120°
180°
DC
360° 0°
Rectangular
waveform
α
Conduction angle α
0.6
0.3
0
0.2
0.1
0.4
0.5
α = 60° 180° DC 120°
360°0°
α
V
R
=
15 V
I
F (AV)
Rectangular
waveform
Conduction angle
α
0
0
40
140
0.2 0.6 0.8 1.0 1.4 1.6
20
60
120
100
0.4 1.2
80
P1-P3P4-P5

CRS01(TE85L,Q,M)

Mfr. #:
Buy CRS01(TE85L,Q,M)
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers 30V 1A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet