RSS105N03FU6TB Datasheet RSS105N03FU6TB, RSS105N03TB | P1-P3

RSS105N03

Transistor

1/3

Switching (30V, ±10.5A)

RSS105N03

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

zApplications

Power switching, DC/DC converter.

zExternal dimensions (Unit : mm)

Each lead has same dimensions

SOP8

(1)Source

(2)Source

(3)Source

(4)Gate

(5)Drain

(6)Drain

(7)Drain

(8)Drain

5.0±0.2

0.2±0.1

6.0±0.3

3.9±0.15

0.5±0.1

(

1

)

(

4

)

(

8

)

(

5

)

Max.1.75

1.27

0.15

0.4±0.1

1.5±0.1

0.1

zStructure

•Silicon N-channel MOS FET

zEquivalent circuit

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

(1)Source

(2)Source

(3)Source

(4)Gate

(5)Drain

(6)Drain

(7)Drain

(8)Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(8) (7) (6) (5)

(1) (2) (3) (4)

(8) (7) (6) (5)

zAbsolute maximum ratings (Ta=25°C)

∗

1

∗

1

∗

2

Parameter

V

DSS

Symbol

30

V

GSS

20

A

I

D

±10.5

A

I

DP

±42

A

I

S

1.6

A

I

SP

6.4

W

P

D

2

°C

Tch 150

°C

Tstg

−55 to +150

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipatino

Channel temperature

Strage temperature

Continuous

Pulsed

Continuous

Source current

(Body diode)

Pulsed

∗

1 Pw≤10µs, Duty cycle≤1%

∗

2 Mounted on a ceramic board.

RSS105N03

Transistor

2/3

zThermal resistance (Ta=25°C)

°C / W

Rth (ch-a) 62.5

Parameter Symbol Limits Unit

Channel to ambient

∗

Mounted on a ceramic board.

∗

zElectrical characteristics (Ta=25°C)

Parameter Symbol

I

GSS

Y

fs

Min.

−−10 µAV

GS

=20V, V

DS

=0V

V

DD

15V

Typ. Max.

Unit

Conditions

Gate-source leakage

V

(BR) DSS

30 −−VI

D

=1mA, V

GS

=0V

Drain-source breakdown voltage

I

DSS

−−10 µAV

DS

=30V, V

GS

=0V

Zero gate voltage drain current

V

GS (th)

1.0 − 2.5 V V

DS

=10V, I

D

=1mAGate threshold voltage

−

Static drain-source on-starte

resistance

R

DS (on)

− mΩ

Forward transfer admittance

−

Input capacitance

−−S

Output capacitance

C

iss

−−pF V

DS

=10V

Reverse transfer capacitance

C

oss

−−pF V

GS

=0V

Tum-on delay time

C

rss

−−pF f=1MHz

V

GS

=10V

R

GS

=10Ω

Rise time

t

d (on)

−−ns

Tum-off delay time

t

r

−−ns

Fall time

t

d (off)

−−ns

Total gate charge

t

f

−−ns

Gate-source charge

Q

g

−−nC

Gate-drain charge

Q

gs

−−nC V

GS

=5V

Q

gd

−−nC

∗Pulsed

∗

8.5 11.7 I

D

=±10.5A, V

GS

=10V

11.4 15.8 I

D

=±10.5A, V

GS

=4.5V

12.4 17.2 I

D

=±10.5A, V

GS

=4V

7.0 I

D

=±10.5A, V

DS

=10V

1130

350

210

9

R

L

=2.86Ω

16

53

22

15

2.9

5.9 I

D

=±10.5A

I

D

=5.25A, V

DD

15V

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

Forward voltage

V

SD

−−1.2 V I

S

=6.4A, V

GS

=0V

Parameter Symbol

Min. Typ. Max.

Unit

Conditions

∗Pulsed

∗

zElectrical characteristic curves

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : V

DS

(V)

10

CAPACITANCE : C

(pF)

1000

10000

100

Ta=25°C

f=1MHz

V

GS

=0V

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ciss

Coss

Crss

0.01 0.1 1 10 100

DRAIN CURRENT : I

D

(A)

1

10

SWITCHING TIME : t

(ns)

1000

10000

100

Ta=25°C

V

DD

=15V

V

GS

=10V

R

G

=10Ω

Pulsed

Fig.2 Switching Characteristics

t

d (off)

t

d (on)

t

r

t

f

0246810121416

TOTAL GATE CHARGE : Qg

(nC)

0

1

2

3

4

5

6

7

8

GATE-SOURCE VOLTAGE : V

GS

(V)

Ta=25°C

V

DD

=15V

I

D

=10.5A

R

G

=10Ω

Pulsed

Fig.3

Dynamic Input Characteristics

RSS105N03

Transistor

3/3

0.0 0.5 1.0 1.5 2.0 2.5 3.0

GATE-SOURCE VOLTAGE : V

GS

(V)

100

10

1

0.1

0.01

0.001

DRAIN CURRENT : I

D

(A)

Fig.4

Typical Transfer Characteristics

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

DS

=10V

Pulsed

0246810121416

GATE-SOURCE VOLTAGE : V

GS

(V)

0

50

100

150

200

250

300

350

400

450

500

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate-Source Voltage

Ta=25°C

Pulsed

I

D

=10.5A

I

D

=5.25A

0.0 0.5 1.0 1.5

SOURCE-DRAIN VOLTAGE : V

SD

(V)

0.01

0.1

1

10

100

SOURCE CURRENT : I

s

(A)

Fig.6 Source Current vs.

Source-Drain Voltage

V

GS

=0V

Pulsed

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

0.1 1 10 100

DRAIN CURRENT : I

D

(A)

1

10

100

1000

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current (Ι)

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

GS

=10V

Pulsed

0.1 1 10 100

1

10

100

1000

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

GS

=4.5V

Pulsed

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current (ΙΙ)

0.1 1 10 100

1

10

100

1000

Ta= −25°C

Ta=25°C

Ta=75°C

Ta=125°C

V

GS

=4V

Pulsed

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

R

DS (on)

(mΩ)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current (ΙΙΙ)

RSS105N03FU6TB

RSS105N03FU6TB

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