2N6384

TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523
Devices Qualified Level
2N6383 2N6384 2N6385
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N6383
2N6384
2N6385
Unit
Collector-Emitter Voltage
V
CEO
40 60 80 Vdc
Collector-Base Voltage
V
CBO
40 60 80 Vdc
Emitter-Base Voltage
V
EBO
5.0 Vdc
Base Current I
B
0.25 Adc
Collector Current
I
C
10 Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
6.0
100
W
W
Operating & Storage Temperature
T
op
,
T
stg
-55 to +175
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol
Max. Unit
Thermal Resistance Junction-to-Case
R
θJC
1.75
0
C/W
1) Derate linearly 34.2 mW/
0
C above T
A
> +25
0
C
2) Derate linearly 571 mW/
0
C above T
C
> +25
0
C
TO-3* (TO-204AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc 2N6383
2N6384
2N6385
V
(BR)
CEO
40
60
80
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, R
BB
= 100 2N6383
2N6384
2N6385
V
(BR)
CER
40
60
80
Vdc
Collector-Base Cutoff Current
V
CE
= 40 Vdc 2N6383
V
CE
= 60 Vdc 2N6384
V
CE
= 80 Vdc 2N6385
I
CBO
1.0
1.0
1.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
I
EBO
5.0 mAdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc 2N6383
V
CE
= 60 Vdc 2N6384
V
CE
= 80 Vdc 2N6385
I
CEO
1.0
1.0
1.0
mAdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc, V
BE
= 1.5 Vdc 2N6383
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc 2N6384
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc 2N6385
I
CEX
0.3
0.3
0.3
mAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 3.0 Vdc
I
C
= 10 Adc, V
CE
= 3.0 Vdc
h
FE
1,000
100
20,000
Collector-Emitter Saturation Voltage
I
C
= 5.0 Adc, I
B
= 10 mAdc
I
C
= 10 Adc, I
B
= 0.1 Adc
V
CE(sat)
2.0
3.0
Vdc
Base-Emitter Voltage
I
C
= 5.0 Adc, V
CE
= 3.0 Vdc
I
C
= 10 Adc, V
CE
= 3.0 Vdc
V
BE(on)
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f = 1.0 MHz
h
fe
20 300
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz f 1.0 MHz
C
obo
200 pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc; I
B1
= 20 mAdc
t
on
2.5
µs
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc; I
B1
= -I
B2
= 20 mAdc
t
off
10
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 10 Vdc, I
C
= 10 Adc All Types
Test 2
V
CE
= 30 Vdc, I
C
= 3.33 Adc All Types
Test 3
V
CE
= 40 Vdc, I
C
= 1.5 Adc 2N6383
V
CE
= 60 Vdc, I
C
= 0.4 Adc 2N6384
V
CE
= 80 Vdc, I
C
= 0.16 Adc 2N6385
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2

2N6384

Mfr. #:
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT NPN Pwr Darlington
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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