TLHK4900

Vishay Semiconductors
TLHK4900
Document Number 83027
Rev. 1.6, 21-Sep-07
www.vishay.com
1
High Intensity LED in 3 mm Clear Package
FEATURES
AlInGaP technology
Standard 3 mm (T-1) package
Small mechanical tolerances
Suitable for DC and high peak current
Very small viewing angle
Very high intensity
Luminous intensity categorized
Lead (Pb)-free device
19222
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology.
It is housed in a 3 mm clear plastic package. The small
viewing angle of these devices provides a high
brightness.
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with
uniform appearance.
PRODUCT GROUP AND PACKAGE DATA
Product group: LED
Package: 3 mm
Product series: standard
Angle of half intensity: ± 16°
APPLICATIONS
Status lights
OFF/ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Note:
1)
T
amb
= 25 °C, unless otherwise specified
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLHK4900
Red, I
V
> 40
AllnGaP on GaAs
ABSOLUTE MAXIMUM RATINGS
1)
TLHK4900
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
V
R
5V
DC Forward current
T
amb
60 °C I
F
30 mA
Surge forward current
t
p
10 μsI
FSM
0.1 A
Power dissipation
T
amb
60 °C P
V
80 mW
Junction temperature
T
j
100 °C
Operating temperature range
T
amb
- 40 to + 100 °C
Storage temperature range
T
stg
- 55 to + 100 °C
Soldering temperature
t 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/
ambient
R
thJA
400 K/W
www.vishay.com
2
Document Number 83027
Rev. 1.6, 21-Sep-07
Vishay Semiconductors
TLHK4900
Note:
1)
T
amb
= 25 °C, unless otherwise specified
2)
in one packing unit I
Vmin
/I
Vmax
0.5
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLHK4900, RED
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Luminous intensity
2)
I
F
= 10 mA I
V
40 140 mcd
Dominant wavelength
I
F
= 10 mA λ
d
630 nm
Peak wavelength
I
F
= 10 mA λ
p
643 nm
Angle of half intensity
I
F
= 10 mA
ϕ ± 16 deg
Forward voltage
I
F
= 20 mA V
F
1.9 2.6 V
Reverse voltage
I
R
= 10 μAV
R
5V
Junction capacitance
V
R
= 0, f = 1 MHz C
j
15 pF
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
0
25
50
75
100
125
P - Power Dissipation (mW)
V
95 10887
T
amb
- Ambient Temperature (°C)
100806040200
0
10
20
30
40
60
95 10894
50
I - Forward Current (mA)
F
T
amb
- Ambient Temperature (°C)
100806040200
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 4. Forward Current vs. Forward Voltage
0.4 0.2 0 0.2 0.4
0.6
95 10044
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
8
0.7
1.0
I - RelativeLuminous Intensity
v rel
1
10
100
1.0 1.5 2.0 2.5 3.0
V
F
- Forward Voltage (V)
95 10878
I
F
- Forward Current (mA)
Document Number 83027
Rev. 1.6, 21-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLHK4900
PACKAGE DIMENSIONS in millimeters
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0
0
0.4
0.8
1.2
1.6
96 12077
20 40 60 80 100
I - Relative Luminous Intensity
V rel
T
amb
- Ambient Temperature (°C)
I
F
= 10 mA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
110
96 11589
I
V rel
- Relative Luminous Intensity
t
P
/T
I
F
(mA)505202
0.5 0.2 0.1 0.05 0.021
Figure 7. Relative Luminous Intensity vs. Forward Current
Figure 8. Relative Intensity vs. Wavelength
0.01
0.1
1
10
1 10 100
I
F
- Forward Current (mA)
96 11588
I
V rel
- Relative Luminous Intensity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
600 610 620 630 640 650 660 670 680 690 700
λ - Wavelength (nm)
96 12075
I - Relative Intensity
rel
95 10914

TLHK4900

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Standard LEDs - Through Hole Red Clear Non-Diff
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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