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BAT60BE6327HTSA1

P1-P3P4-P6
2007-04-19
1
BAT60B...
Silicon Schottky Diode
• High current rectifier Schottky diode with
very low V
F
drop (typ. 0.24 V at I
F
= 10mA)
• For power supply applications
• For clamping and protection in
low voltage applications
• For detection and step-up-conversion
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
BAT60B
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration Marking
BAT60B SOD323 single white/5
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage
2)
V
R
10 V
Forward current I
F
3 A
Non-repetitive peak surge forward current
(t ≤ 10ms)
I
FSM
5
Total power dissipation
T
S
≤ 28°C
P
tot
1350 mW
Junction temperature T
j
150 °C
Operating temperature range T
o
p
-55 ... 125
Storage temperature T
st
g
-55 ... 150
1
Pb-containing package may be available upon special request
2
For T
A
> 25 °C the derating of V
R
has to be considered. Please refer to curve Permissible reverse voltage.
2007-04-19
2
BAT60B...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
R
thJS
≤ 90
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
2)
V
R
= 5 V
V
R
= 8 V
V
R
= 5 V, T
A
= 80 °C
V
R
= 8 V, T
A
= 80 °C
I
R
-
-
-
-
5
10
100
410
15
25
800
1500
µA
Forward voltage
2)
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
V
F
0.2
0.26
0.32
0.36
0.24
0.32
0.4
0.48
0.3
0.38
0.5
0.6
V
AC Characteristics
Diode capacitance
V
R
= 5 V, f = 1 MHz
C
T
12 25 30 pF
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2
Pulsed test: t
p
= 300 µs; D = 0.01
2007-04-19
3
BAT60B...
Reverse current I
R
= ƒ(V
R
)
T
A
= Parameter
0 2 4 6 8
V
12
V
R
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
A
I
R
25°C
-40°C
85°C
125°C
Forward current I
F
= ƒ (V
F
)
T
A
= Parameter
0 0.1 0.2 0.3 0.4 0.5 0.6
V
0.8
VF
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40°C
25°C
85°C
125°C
Permissible Reverse voltage V
R
= ƒ (T
A
)
t
p
= Parameter; duty cycle < 0.01
Device mounted on PCB with R
th
= 160 K/W
0 20 40 60 80 100 120
°C
150
T
A
0
1
2
3
4
5
6
7
8
9
10
V
12
V
R
300µs
100ms
DC
Forward current I
F
= ƒ (T
S
)
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
500
1000
1500
2000
2500
mA
3500
I
F
P1-P3P4-P6

BAT60BE6327HTSA1

Mfr. #:
Buy BAT60BE6327HTSA1
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers Silicon Schottky Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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