SI6413DQ-T1-E3

Vishay Siliconix
Si6413DQ
Document Number: 72084
S-80682-Rev. B, 31-Mar-08
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET
FEATURES
Halogen-free
TrenchFET
®
Power MOSFET
APPLICATIONS
Load Switch
PA Switch
Charger Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.010 at V
GS
= - 4.5 V
- 8.8
0.013 at V
GS
= - 2.5 V
- 7.6
0.016 at V
GS
= - 1.8 V
- 6.8
Si6413DQ
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
Ordering Information: Si6413DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 8.8 - 7.2
A
T
A
= 70 °C
- 7.0 - 5.7
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 30
Continuous Source Current (Diode Conduction)
a
I
S
- 1.35 - 0.95
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.5 1.05
W
T
A
= 70 °C
1.0 0.67
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
60 83
°C/W
Steady State 100 120
Maximum Junction-to-Foot Steady State
R
thJF
35 45
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 72084
S-80682-Rev. B, 31-Mar-08
Vishay Siliconix
Si6413DQ
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 400 µA
- 0.40 - 0.8 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
- 1
µA
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 70 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 8.8 A
0.008 0.010
Ω
V
GS
= - 2.5 V, I
D
= - 7.6 A
0.010 0.013
V
GS
= - 1.8 V, I
D
= - 6.8 A
0.013 0.016
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 8.8 A
45 S
Diode Forward Voltage
a
V
SD
I
S
= - 1.3 A, V
GS
= 0 V
- 0.58 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 5 V, I
D
= - 8.8 A
69 105
nCGate-Source Charge
Q
gs
9.5
Gate-Drain Charge
Q
gd
15.5
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
- 1 A, V
GEN
= - 4.5 V, R
G
= 6 Ω
55 85
ns
Rise Time
t
r
120 200
Turn-Off Delay Time
t
d(off)
305 470
Fall Time
t
f
160 250
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.3 A, di/dt = 100 A/µs
90 150
Output Characteristics
0
6
12
18
24
30
012345
V
GS
= 5 thru 2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1.0 V
1.5 V
Transfer Characteristics
0
6
12
18
24
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72084
S-80682-Rev. B, 31-Mar-08
www.vishay.com
3
Vishay Siliconix
Si6413DQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.000
0.006
0.012
0.018
0.024
0.030
0 6 12 18 24 30
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
0
1
2
3
4
5
0 1428425670
V
DS
= 10 V
I
D
= 8.8 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
30
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
1600
3200
4800
6400
8000
048121620
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 8.8 A
T
J
- Junction Temperature (°C)
(Normalized)
R - On-Resistance
DS(on)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0123456
7
I
D
= 8.8 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)

SI6413DQ-T1-E3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 7.2A 8TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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