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IRFB3207PBF

P1-P3P4-P6P7-P9P10-P12
IRF/B/S/SL3207
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
50
100
150
200
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED BY PACKAGE
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
70
80
90
100
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
20 30 40 50 60 70 80
V
DS,
Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
E
n
e
r
g
y
(
µ
J
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
1000
2000
3000
4000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
12A
16A
BOTTOM
75A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
SD
, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100 1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
IRF/B/S/SL3207
www.irf.com 5
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Ri (°C/W) τi (sec)
0.2151 0.001175
0.2350 0.017994
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neitherT
jmax
nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
200
400
600
800
1000
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 75A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
IRF/B/S/SL3207
6 www.irf.com
Fig. 17 - Typical Recovery Current vs. di
f
/dt
Fig 16. Threshold Voltage Vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250µA
Fig. 19 - Typical Stored Charge vs. di
f
/dtFig. 18 - Typical Recovery Current vs. di
f
/dt
Fig. 20 - Typical Stored Charge vs. di
f
/dt
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
0
100
200
300
400
Q
R
R
-
(
n
C
)
I
F
= 30A
V
R
= 64V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
2
4
6
8
10
12
14
16
I
R
R
M
-
(
A
)
I
F
= 30A
V
R
= 64V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
0
100
200
300
400
Q
R
R
-
(
n
C
)
I
F
= 45A
V
R
= 64V
T
J
= 125°C
T
J
= 25°C
100 200 300 400 500 600 700 800 900 1000
di
f
/ dt - (A / µs)
2
4
6
8
10
12
14
16
I
R
R
M
-
(
A
)
I
F
= 45A
V
R
= 64V
T
J
= 125°C
T
J
= 25°C
P1-P3P4-P6P7-P9P10-P12

IRFB3207PBF

Mfr. #:
Buy IRFB3207PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
Lifecycle:
New from this manufacturer.
Delivery:
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