CREAT BY ART
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 300 400 600 800 1000 V
V
RMS
35 70 140 210 280 420 560 700 V
V
DC
50 100 200 300 400 600 800 1000 V
I
F(AV)
A
t
rr
ns
C
J
pF
T
J
°C
T
STG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Document Number: DS_D1410041 Version: H15
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Storage temperature range - 55 to +150
DO-201AD
HER
306G
1.0 1.3 1.7
Maximum reverse recovery time (Note 2) 50 75
Typical thermal resistance
R
θJL
R
θJA
10
35
°C/W
Operating junction temperature range - 55 to +150
Maximum reverse current @ rated VR T
J
=25 °C
T
J
=125 °C
I
R
10
μA
200
Typical junction capacitance (Note 3) 60 35
Maximum instantaneous forward voltage (Note 1)
@ 3 A
V
F
V
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 3
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125
HER
304G
HER
305G
HER
307G
HER
308G
UNIT
A
Maximum repetitive peak reverse voltage
MECHANICAL DATA
Case: DO-201AD
Weight: 1.1 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
HER
301G
HER
302G
HER
303G
HER301G - HER308G
Taiwan Semiconductor
3A, 50V - 1000V Glass Passivated Hi
h Efficient Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
