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SE3455-003

P1-P3P4-P4
GaAs Infrared Emitting Diode
SE3455/5455
DESCRIPTION
FEATURES
TO-46 metal can package
•
Choice of flat window or lensed package
•
90¡ or 20¡ (nominal) beam angle option
•
935 nm wavelength
•
Wide operating temperature range
(-55¡C to +125¡C)
•
Ideal for high pulsed current applications
•
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
•
The SE3455/5455 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3455 series has flat window cans
providing a wide beam angle, while the SE5455 series
has glass lensed cans providing a narrow beam angle.
These devices are constructed with dual bond wires
suitable for pulsed current applications. The TO-46
packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS
in inches (mm)
Tolerance
2. ANODE
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
.140 (3.56)
.153 (3.89)
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
(CASE)
DIM_005a.ds4
SE3455
2. ANODE (CASE)
1. CATHODE (TAB)
LEADS:
.046(1.17)
.036(.91)
2
1
DIA.
(.460)
.018
MIN.
(12.70)
.500
(0.36)
.015
5.08
.200
DIA.
.137 (3.48)
.160 (4.06)
.188 (4.77)
.178 (4.52)
DIA.
DIA.
.208 (5.28)
.219 (5.56)
.100(2.54)DIA
NOM
45°
.048(1.22)
.028(.71)
.224 (5.89)
.247 (6.27)
DIM_005b.ds4
SE5455
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
28
GaAs Infrared Emitting Diode
SE3455/5455
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3 A
(1µs pulse width, 300 pps)
Power Dissipation
150 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
29
GaAs Infrared Emitting Diode
SE3455/5455
Radiant Intensity vs
Angular Displacement (SE3455)
gra_017.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vs
Angular Displacement (SE5455)
gra_023.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 2
Radiant Intensity vs
Forward Current
gra_018.ds4
Forward current - mA
N
o
r
m
a
l
i
z
e
d
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
-
%
0.0
50
100
150
200
250
0 100 200 300 400 500
Pulsed
Fig. 3 Forward Voltage vs
Forward Current
gra_019.ds4
Forward current - mA
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
0 20 40 60 80 100
Fig. 4
Forward Voltage vs
Temperature
gra_020.ds4
Temperature - °C
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.21
1.23
1.25
1.27
1.29
1.31
1.33
1.35
-30 -10 10 30 50 70 90
I
F
=100 mA
Fig. 5 Spectral Bandwidth
gra_005.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
870 890 910 930 950 970 990 1010
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
30
P1-P3P4-P4

SE3455-003

Mfr. #:
Buy SE3455-003
Manufacturer:
Description:
Infrared Emitters GaAs Emiting Diode TO-46 Metal Can Pkg
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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