NSBC144WPDP6T5G

NSBC144WPDP6
http://onsemi.com
4
TYPICAL CHARACTERISTICS NPN TRANSISTOR
NSBC144WPDP6
1000
100
10
1
Figure 2. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
01020
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
V
in
, INPUT VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOREMITTER VOLTAGE (V)
I
C
/I
B
= 10
55C
150C
25C
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25C
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
150C
55C
25C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25C
1
0.1
0.01
4030
0.1 1
10010
V
CE
= 10 V
25C
150C
55C
2.4
010 20304050
100
10
1
0.1
150C
55C
04 81216202428
2
1.6
1.2
0.8
0.4
0
NSBC144WPDP6
http://onsemi.com
5
TYPICAL CHARACTERISTICS PNP TRANSISTOR
NSBC144WPDP6
150C
55C
25C
1000
100
10
1
Figure 7. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
01020
50
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
V
R
, REVERSE VOLTAGE (V)
V
CE(sat)
, COLLECTOREMITTER VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25C
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
150C
55C
25C
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
25C
10
4030
0.1 1
10010
V
CE
= 10 V
25C
150C
55C
7
010 20304050
100
10
1
0.1
150C
55C
04 81216202428
1
0.1
0.01
6
5
4
3
2
1
0
100
10
1
0.1
0.01
0.001
NSBC144WPDP6
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT963
CASE 527AD
ISSUE E
DIM MIN NOM MAX
MILLIMETERS
A 0.34 0.37 0.40
b 0.10 0.15 0.20
C 0.07 0.12 0.17
D 0.95 1.00 1.05
E 0.75 0.80 0.85
e 0.35 BSC
0.95 1.00 1.05
H
E
E
D
C
A
H
E
123
456
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
X
Y
TOP VIEW
SIDE VIEW
e
b
X0.08
6X
Y
BOTTOM VIEW
6X
0.35
PITCH
1.20
0.20
DIMENSIONS: MILLIMETERS
RECOMMENDED
PACKAGE
OUTLINE
MOUNTING FOOTPRINT*
L 0.19 REF
L2 0.05 0.10 0.15
L
6X
L2
6X
6X
0.35
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSBC144WPDP6T5G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
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