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IRFBC40LCPBF

P1-P3P4-P6P7-P9
Document Number: 91114 www.vishay.com
S11-0515-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, V
GS
Rating
• Reduced C
iss
, C
oss
, C
rss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 25 mH, R
g
= 25 , I
AS
= 6.2 A (see fig. 12).
c. I
SD
6.2 A, dI/dt 80 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 600
R
DS(on)
()V
GS
= 10 V 1.2
Q
g
(Max.) (nC) 39
Q
gs
(nC) 10
Q
gd
(nC) 19
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRFBC40LCPbF
SiHFBC40LC-E3
SnPb
IRFBC40LC
SiHFBC40LC
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
6.2
A
T
C
= 100 °C 3.9
Pulsed Drain Current
a
I
DM
25
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
530 mJ
Repetitive Avalanche Current
a
I
AR
6.2 A
Repetitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
125 W
Peak Diode Recovery dV/dt
c
dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91114
2 S11-0515-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - -
V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.70 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 -
4.0 V
Gate-Source Leakage I
GSS
V
GS
= 20 - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 100
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 3.7 A
b
--1.2
Forward Transconductance g
fs
V
DS
= 100 V, I
D
= 3.7 A
b
3.7 - -
S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
- 1100 -
pFOutput Capacitance C
oss
- 140 -
Reverse Transfer Capacitance C
rss
-15-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 6.2 A, V
DS
= 360 V,
see fig. 6 and 13
b
--39
nC Gate-Source Charge Q
gs
--10
Gate-Drain Charge Q
gd
--19
Turn-On Delay Time t
d(on)
V
DD
= 300 V, I
D
= 6.2 A
R
g
= 9.1 , R
D
= 47, see fig. 10
b
-12-
ns
Rise Time t
r
-20-
Turn-Off Delay Time t
d(off)
-27-
Fall Time t
f
-17-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--6.2
A
Pulsed Diode Forward Current
a
I
SM
--25
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 6.2 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 6.2 A, dI/dt = 100 A/μs
b
- 440 680 ns
Body Diode Reverse Recovery Charge Q
rr
-2.13.2μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
Document Number: 91114 www.vishay.com
S11-0515-Rev. C, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91114_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
10
-2
10
-2
10
-1
10
2
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
91114_02
4.5 V
10
-2
10
-2
10
-1
10
2
20 µs Pulse Width
V
DS
= 100 V
10
1
10
0
10
-1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
150 °C
91114_03
I
D
= 6.2 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91114_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
3.5
P1-P3P4-P6P7-P9

IRFBC40LCPBF

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Buy IRFBC40LCPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 600V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
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