TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/408
Devices Qualified Level
2N3715 2N3716
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3715
2N3716
Units
Collector-Emitter Voltage
V
CEO
60 80 Vdc
Collector-Base Voltage
V
CBO
80 100 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Base Current I
B
4.0 Adc
Collector Current
I
C
10 Adc
Total Power Dissipation @ T
A
= 25
0
C
@ T
C
=100
0
C
P
T
5.0
85.7
W
W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
1.17
0
C/W
1) Derate linearly 28.57 mW/
0
C for T
A
>25
0
C
2) Derate linearly 0.857 W/
0
C for T
C
>100
0
C
TO-3* (TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc 2N3715
2N3716
V
(BR)
CEO
60
80
Vdc
Collector-Base Cutoff Current
V
CB
= 80 Vdc 2N3715
V
CB
= 100 Vdc 2N3716
I
CBO
10
10
µAdc
Emitter-Base Breakdown Voltage
V
EB
= 7.0 Vdc
I
EBO
1.0
mAdc
Collector-Emitter Cutoff Current
V
BE
= 1.5 Vdc, V
CE
= 60 Vdc 2N3715
V
BE
= 1.5 Vdc, V
CE
= 80 Vdc 2N3716
I
CEX
1.0
1.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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