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TSM1N80CW RPG
P1-P3
P4-P6
P7-P7
TSM1N
80
Taiwan Semicondu
ctor
Docum
ent Number: DS_P0
000037
4
Vers
ion: B15
CHARACTERISTICS CURVES
(T
A
= 25°C unless other
wise noted)
Output
Characteristics
Transfer Cha
racteristics
On-Resistanc
e vs. Drain
Current
Gate Charge
On-Resistanc
e vs. Juncti
on Temp
erature
Source-Drain
Diode Forw
ard Voltage
TSM1N
80
Taiwan Semicondu
ctor
Docum
ent Number: DS_P0
000037
5
Vers
ion: B15
CHARACTERISTICS CURVES
(T
A
= 25°C unless other
wise noted)
On-Resistanc
e vs. Gate-S
ource Voltage
Threshold Volt
age
Maximu
m Safe Operating Area
Normalized T
hermal T
ransient Impedance,
Junctio
n-to-
A
mbient
TSM1N
80
Taiwan Semicondu
ctor
Docum
ent Number: DS_P0
000037
6
Vers
ion: B15
PACKAGE OUTLINE DIMENSIONS
(Unit: Millim
eters)
SOT-223
SUGGESTED PAD LAYOUT
(Unit: Millim
eters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code f
or Halogen
Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
(1~9, A
~Z)
P1-P3
P4-P6
P7-P7
TSM1N80CW RPG
Mfr. #:
Buy TSM1N80CW RPG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 800V N Channel Power Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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TSM1N80CW RPG