TSM1N80CW RPG

TSM1N80
Taiwan Semiconductor
Document Number: DS_P0000037 4 Version: B15
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM1N80
Taiwan Semiconductor
Document Number: DS_P0000037 5 Version: B15
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM1N80
Taiwan Semiconductor
Document Number: DS_P0000037 6 Version: B15
PACKAGE OUTLINE DIMENSIONS
(Unit: Millimeters)
SOT-223
SUGGESTED PAD LAYOUT
(Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
(1~9, A~Z)

TSM1N80CW RPG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 800V N Channel Power Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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