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MT4HTF1664AY-667B1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
DDR2 SDRAM UDIMM
MT4HTF1664AY – 128MB
MT4HTF3264AY – 256MB
MT4HTF6464AY – 512MB
Features
•
240-pin, unbuffered dual in-line memory module
(UDIMM)
•
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
•
128MB (16 Meg x 64), 256MB (32 Meg x 64),
512MB (64 Meg x 64)
•
V
DD
= V
DDQ
= 1.8V
•
V
DDSPD
= 1.7–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Multiple internal device banks for concurrent
operation
•
Programmable CAS latency (CL)
•
Posted CAS additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence detect (SPD) with EEPROM
•
Gold edge contacts
•
Single rank
Figure 1: 240-Pin UDIMM (MO-237 R/C C)
Module height 30.0mm (1.18in)
Options Marking
•
Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C)
None
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
I
•
Package
–
240-pin DIMM (lead-free) Y
•
Frequency/CL
2
–
2.5ns @ CL = 5 (DDR2-800)
4
-80E
–
2.5ns @ CL = 6 (DDR2-800)
4
-800
–
3.0ns @ CL = 5 (DDR2-667) -667
–
3.75ns @ CL = 4 (DDR2-533)
3
-53E
–
5.0ns @ CL = 3 (DDR2-400)
3
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Contact Micron for product availability.
4. Not available in 128MB and 256MB.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300
–
667 553 400 15 15 55
-53E PC2-4200
– –
553 400 15 15 55
-40E PC2-3200
– –
400 400 15 15 55
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Features
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 128MB 256MB 512MB
Refresh count 8K 8K 8K
Row address 8K A[12:0] 8K A[12:0] 8K A[12:0]
Device bank address 4 BA[1:0] 4 BA[1:0] 8 BA[2:0]
Device configuration 256Mb (16 Meg x 16) 512Mb (32 Meg x 16) 1Gb (64 Meg x 16)
Column address 512 A[8:0] 1K A[9:0] 1K A[9:0]
Module rank address 1 S0# 1 S0# 1 S0#
Table 3: Part Numbers and Timing Parameters – 128MB Modules (End of Life)
Base device: MT47H16M16,
1
256Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT4HTF1664A(I)Y-667__ 128MB 16 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT4HTF1664A(I)Y-53E__ 128MB 16 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT4HTF1664A(I)Y-40E__ 128MB 16 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Numbers and Timing Parameters – 256MB Modules
Base device: MT47H32M16,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT4HTF3264A(I)Y-80E__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF3264A(I)Y-800__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF3264A(I)Y-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT4HTF3264A(I)Y-53E__ 256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT4HTF3264A(I)Y-40E__ 256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 5: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H64M16,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT4HTF6464A(I)Y-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT4HTF6464A(I)Y-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT4HTF6464A(I)Y-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT4HTF6464A(I)Y-53E__ 512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT4HTF6464A(I)Y-40E__ 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT4HTF3264AY-667E1.
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Features
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Pin Assignments
Table 6: Pin Assignments
240-Pin UDIMM Front 240-Pin UDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1 V
REF
31 DQ19 61 A4 91 V
SS
121 V
SS
151 V
SS
181 V
DDQ
211 DM5
2 V
SS
32 V
SS
62 V
DDQ
92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC
3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 V
SS
4 DQ1 34 DQ25 64 V
DD
94 V
SS
124 V
SS
154 V
SS
184 V
DD
214 DQ46
5 V
SS
35 V
SS
65 V
SS
95 DQ42 125 DM0 155 DM3 185 CK0 215 DQ47
6 DQS0# 36 DQS3# 66 V
SS
96 DQ43 126 NC 156 NC 186 CK0# 216 V
SS
7 DQS0 37 DQS3 67 V
DD
97 V
SS
127 V
SS
157 V
SS
187 V
DD
217 DQ52
8 V
SS
38 V
SS
68 NC 98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53
9 DQ2 39 DQ26 69 V
DD
99 DQ49 129 DQ7 159 DQ31 189 V
DD
219 V
SS
10 DQ3 40 DQ27 70 A10 100 V
SS
130 V
SS
160 V
SS
190 BA1 220 CK2
11 V
SS
41 V
SS
71 BA0 101 SA2 131 DQ12 161 NC 191 V
DDQ
221 CK2#
12 DQ8 42 NC 72 V
DDQ
102 NC 132 DQ13 162 NC 192 RAS# 222 V
SS
13 DQ9 43 NC 73 WE# 103 V
SS
133 V
SS
163 V
SS
193 S0# 223 DM6
14 V
SS
44 V
SS
74 CAS# 104 DQS6# 134 DM1 164 NC 194 V
DDQ
224 NC
15 DQS1# 45 NC 75 V
DDQ
105 DQS6 135 NC 165 NC 195 ODT0 225 V
SS
16 DQS1 46 NC 76 NC 106 V
SS
136 V
SS
166 V
SS
196 NC 226 DQ54
17 V
SS
47 V
SS
77 NC 107 DQ50 137 CK1 167 NC 197 V
DD
227 DQ55
18 NC 48 NC 78 V
DDQ
108 DQ51 138 CK1# 168 NC 198 V
SS
228 V
SS
19 NC 49 NC 79 V
SS
109 V
SS
139 V
SS
169 V
SS
199 DQ36 229 DQ60
20 V
SS
50 V
SS
80 DQ32 110 DQ56 140 DQ14 170 V
DDQ
200 DQ37 230 DQ61
21 DQ10 51 V
DDQ
81 DQ33 111 DQ57 141 DQ15 171 NC 201 V
SS
231 V
SS
22 DQ11 52 CKE0 82 V
SS
112 V
SS
142 V
SS
172 V
DD
202 DM4 232 DM7
23 V
SS
53 V
DD
83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC 233 NC
24 DQ16 54 NC/BA2
1
84 DQS4 114 DQS7 144 DQ21 174 NC 204 V
SS
234 V
SS
25 DQ17 55 NC 85 V
SS
115 V
SS
145 V
SS
175 V
DDQ
205 DQ38 235 DQ62
26 V
SS
56 V
DDQ
86 DQ34 116 DQ58 146 DM2 176 A12 206 DQ39 236 DQ63
27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC 177 A9 207 V
SS
237 V
SS
28 DQS2 58 A7 88 V
SS
118 V
SS
148 V
SS
178 V
DD
208 DQ44 238 V
DDSPD
29 V
SS
59 V
DD
89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0
30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 V
SS
240 SA1
Note:
1. Pin 54 is NC for 128MB and 256MB or BA2 for 512MB.
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Pin Assignments
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MT4HTF1664AY-667B1

Mfr. #:
Buy MT4HTF1664AY-667B1
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 128MB 240UDIMM
Lifecycle:
New from this manufacturer.
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